基于CNFET的高性能三值SRAM-PUF电路设计

发布时间：2018-02-08 16:47

本文关键词： 碳纳米管场效应晶体管三值逻辑 SRAM-PUF 随机性唯一性　出处：《电子学报》2017年05期 　论文类型：期刊论文

【摘要】：通过对碳纳米管场效应晶体管(Carbon Nanotube Field Effect Transistor,CNFET)和物理不可克隆函(Physical Unclonable Functions,PUF)电路的研究,提出一种高性能三值SRAM-PUF电路结构.该电路结构首先利用交叉耦合三值反相器产生随机电流,并对其电流进行失配分析;然后结合三值SRAM单元的电流竞争得到随机的、不可克隆的三值输出信号"0"、"1"和"2".在32nm CNFET标准模型库下,采用HSPICE对所设计的三值SRAM-PUF电路进行Monte Carlo仿真,分析其随机性、唯一性等性能.模拟结果表明所设计的三值SRAM-PUF电路归一化随机性偏差和唯一性偏差均为0.03%,且与传统二值CMOS设计的PUF电路相比工作速度提高33%,激励响应对数量为原来的(1.5)n倍.
[Abstract]:Based on the study of carbon Nanotube Field Effect transistor-CNFETs and physical Unclonable functions PUFF circuits, a high performance ternary SRAM-PUF circuit structure is proposed, in which the cross-coupled ternary inverters are used to generate random currents. The mismatch analysis of its current is carried out, and the random, uncloned ternary output signals "0", "1" and "2" are obtained by combining the current competition of ternary SRAM cells. Under the 32nm CNFET standard model library, the designed ternary SRAM-PUF circuits are simulated with HSPICE for Monte Carlo simulation. Analyzing its randomness, The simulation results show that the normalized and unique deviations of the ternary SRAM-PUF circuits are both 0.03 and 0.03. Compared with the traditional binary CMOS circuits, the operating speed of the designed PUF circuits is increased by 33%, and the number of excitation responses is 1.5 n times higher than that of the traditional binary CMOS circuits.
【作者单位】：宁波大学电路与系统研究所;
【基金】：国家自然科学基金(No.61474068,No.61234002) 浙江省公益性技术应用研究计划项目(No.2016C31078) 浙江省自然科学基金(No.LQ14F040001) 宁波市自然科学基金(No.2015A610107)
【分类号】：TN402

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