硅衬底GaN基LED薄膜芯片的应力调制

发布时间：2018-02-09 19:57

  本文关键词： 硅衬底 GaN 应力 XRD Ag-In　出处：《发光学报》2016年08期 　论文类型：期刊论文

【摘要】：将Si衬底GaN基LED外延薄膜经晶圆键合、去硅衬底等工艺制作成垂直结构GaN基LED薄膜芯片,并对其进行不同温度的连续退火,通过高分辨X射线衍射(HRXRD)研究了连续退火过程中GaN薄膜芯片的应力变化。研究发现:垂直结构LED薄膜芯片在160~180℃下退火应力释放明显,200℃时应力释放充分,GaN的晶格常数接近标准值。继续升温应力不再发生明显变化,GaN薄膜的晶格常数只在标准晶格常数值附近波动。扫描电子显微镜给出的bonding层中Ag-In合金情况很好地解释了薄膜芯片应力的变化。
[Abstract]:GaN based LED epitaxial films on Si substrates were fabricated by wafer bonding and desilicon substrates to fabricate GaN based LED thin film chips with vertical structure and continuous annealing at different temperatures. The stress changes of GaN thin film chip during continuous annealing were studied by high resolution X-ray diffraction (HRXRD). It was found that the stress release of vertical structure LED thin film chip at 160 ~ 180 鈩，

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