W波段谐波混频器设计

发布时间：2018-02-12 14:15

本文关键词： W波段谐波混频器肖特基二极管变频损耗　出处：《南京理工大学》2015年硕士论文　论文类型：学位论文

【摘要】：W波段是指频率在75～110GHz范围内的电磁波,在毫米波中,W波段是重要的窗口频率,其中心频率位于毫米波94GHz的大气窗口,因而在通信、遥感探测等方面应用日益广泛。作为系统中的关键器件,混频器的指标极大程度上影响着系统整体的性能,分谐波技术因可以降低本振源的要求而得到广泛应用。本文首先介绍了基于肖特基二极管技术的谐波混频器国内外发展动态,在此基础上,对肖特基二极管应用于谐波混频器的原理和设计方法展开了研究。在W波段,由于肖特基二极管封装寄生参数对混频器性能的影响已经非常显著,因而利用集总等效电路法对VDI公司的W波段肖特基反向并联二极管对R23C15进行了相关参数的分析,基于肖特基二极管物理模型来充分考虑封装寄生参数,建立较为准确的反向并联二极管对等效模型。为了克服基于分立器件仿真的传统谐波混频器设计方法优化空间不大而难以得到最优变频损耗的缺点,在基于器件级建模仿真的基础上,使用全局性系统级仿真优化方法,对影响谐波混频器性能的关键参数进行优化,最终在固定本振条件下仿真结果如下：W波段二次谐波混频器在80～100GHz内变频损耗优于9.4dB,W波段四次谐波混频器在84～96GHz内变频损耗优于11.2dB。加工并测试了W波段四次谐波混频器,测试结果表明在82～94GHz内变频损耗小于14dB,验证了管对等效模型建立方法的合理性,确立了一种高效可靠的谐波混频器设计方法。
[Abstract]:The W band is an electromagnetic wave with a frequency of 75 ~ 110GHz. In the millimeter wave, the W band is an important window frequency. The center frequency of the wave is located in the atmosphere window of the millimeter wave at 94GHz. As a key device in the system, the index of mixer greatly affects the overall performance of the system. Subharmonic technology is widely used because it can reduce the requirement of local oscillator. Firstly, this paper introduces the development of harmonic mixer based on Schottky diode technology at home and abroad. The principle and design method of Schottky diode used in harmonic mixer are studied. In W band, the influence of parasitic parameters of Schottky diode packaging on the performance of mixer is very significant. Therefore, the lumped equivalent circuit method is used to analyze the related parameters of VDI W-band Schottky reverse parallel diodes for R23C15. Based on the Schottky diode physical model, the parasitic parameters of packaging are fully considered. In order to overcome the disadvantage of traditional harmonic mixer design method based on discrete device simulation, it is difficult to obtain the optimal frequency conversion loss because of the small optimization space of the traditional harmonic mixer design method based on discrete device simulation. Based on the device level modeling and simulation, the key parameters affecting the performance of the harmonic mixer are optimized by using the global system-level simulation optimization method. Finally, the simulation results under the condition of fixed local oscillator are as follows: the frequency conversion loss of the second harmonic mixer in the W band is better than that of the fourth harmonic mixer in the frequency band of 9.4 dB at 100GHz, and the frequency loss of the fourth-harmonic mixer in the band of 9.4 dBU is better than that of 11.2dB at 840.96GHz. The W-Band fourth-harmonic mixer is machined and tested. The test results show that the frequency conversion loss is less than 14dB at 82nm 94GHz, which verifies the rationality of the method of establishing equivalent model of transistor pair, and establishes an efficient and reliable design method of harmonic mixer.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN773

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