快速恢复外延二极管用150mm高均匀性硅外延材料的制备

发布时间：2018-02-15 09:12

本文关键词： 硅外延材料均匀性化学气相沉积快速恢复外延二极管　出处：《固体电子学研究与进展》2017年05期 　论文类型：期刊论文

【摘要】：利用PE3061D型平板式外延炉,在150mm的重掺As的硅单晶衬底上采用化学气相沉积(CVD)方法制备参数可控且高均匀性的外延层,通过聚光灯、原子力显微镜(AFM)、傅里叶变换红外光谱仪(FT-IR)、汞探针电容-电压测试仪(Hg CV)等测试设备分别研究了外延层的表面形貌、微粗糙度、厚度、电阻率以及均匀性参数。采用了基座浅层包硅技术、周期性滞留层杂质稀释技术、高温快速二次本征生长技术、温场流场调控技术等新型工艺技术,使外延层厚度满足(15±2%)μm,电阻率满足(15±2%)Ω·cm的设计要求,片内厚度和电阻率不均匀性达到2%的水平。制备的硅外延材料应用于FRED的试产,击穿电压高于125V,晶圆的成品率达到90%以上,满足了120VFRED器件使用要求,实现了自主可控。
[Abstract]:An epitaxial layer with controllable parameters and high uniformity was prepared by chemical vapor deposition (CVD) method on a 150mm heavy as doped silicon single crystal substrate in a PE3061D flat type epitaxial furnace. Atomic force microscope (AFM), Fourier transform infrared spectrometer (FTIR), mercury probe capacitance-voltage tester (Hg CVV) and other testing equipment have studied the surface morphology, micro-roughness and thickness of the epitaxial layer, respectively. Resistivity and homogeneity parameters. New technology, such as the technology of base shallow layer inclusion silicon, periodic retention layer impurity dilution technology, high temperature fast secondary growth technology, temperature field flow field control technology and so on, are adopted. The thickness of the epitaxial layer meets the design requirements of 15 卤2 渭 m and the resistivity of 15 卤2) 惟路cm, and the inhomogeneity of the thickness and resistivity reaches 2%. The prepared silicon epitaxial material is used in the trial production of FRED, the breakdown voltage is higher than 125 V, and the finished product rate of the wafer is more than 90%. It meets the requirements of 120 VFRED devices and realizes autonomous and controllable.
【作者单位】：中国电子科技集团公司第四十六研究所;
【分类号】：TN304.054

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