亚阈值状态下MOSFET二维双区和单区静电势模型的比较

发布时间：2018-02-15 11:16

本文关键词： 单区模型双区模型特征函数边界条件平均误差　出处：《现代电子技术》2017年10期 　论文类型：期刊论文

【摘要】：定义一个平均误差,该误差可以估算求解MOSFETs二维双区和单区静电势模型电势分布所用源漏端边界条件的偏差情况。首先根据长沟道模型近似确定衬底耗尽层厚度,通过平均误差计算发现双区模型最大源漏偏差远小于0.06 V,而单区模型相应的源漏偏差大于0.1 V。当器件沟道长度为亚微米级时,利用电压掺杂转换模型的耗尽层厚度计算方法对两种模型做出校正,双区电势模型在校正后的源漏条件偏差有明显的减小,单区模型的源漏偏差却会增大,尤其在短沟道以及衬底高掺杂浓度时误差较大。结果表明,双区静电势模型更为精准。
[Abstract]:The definition of an average error, the error can be estimated for MOSFETs two-dimensional and single zone electrostatic potential distribution model with potential source and drain side boundary conditions. According to the deviation of the long channel approximation model to determine the substrate depletion layer thickness, the average error calculation model double source drain maximum error less than 0.06 V. While the corresponding single zone model of source drain deviation is greater than 0.1 V. when the device channel length of sub micron, calculation method of transformation model using the voltage doped depletion layer thickness correction is made of two kinds of model, double potential model in the source drain bias conditions after correction were reduced, single zone model of the source drain but the deviation will increase, especially in the short channel and high substrate doping concentration error. The results show that the double electrostatic potential model is more accurate.

【作者单位】：华北电力大学现代电子科学研究所;
【基金】：国家自然科学基金资助项目(61176080)
【分类号】：TN386

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