考虑偏置温度不稳定性的软差错率分析

发布时间：2018-02-16 01:31

本文关键词： 集成电路偏置温度不稳定性软差错率关键电荷值延迟　出处：《电子与信息学报》2017年07期 　论文类型：期刊论文

【摘要】：纳米工艺下,老化效应与软差错共同引发的集成电路可靠性问题至关重要。该文分析偏置温度不稳定性(BTI),包括负偏置温度不稳定性(NBTI)和正偏置温度不稳定性(PBTI)对软差错率的影响,提出从关键电荷值和延迟两个因素综合考虑。首先分析BTI效应下两个因素如何变化,推导了延迟受BTI影响的变化模型,介绍关键电荷的变化机理。然后探讨将两个因素结合到软差错率(SER)评估中,推导了融入关键电荷值的SER计算模型,提出将延迟的变化导入到电气屏蔽中的方法。基于ISCAS89基准电路上的实验验证了综合两种因素考虑BTI效应评估SER的有效性和准确性。
[Abstract]:In nanotechnology, The reliability of integrated circuits caused by both aging effect and soft error is very important. In this paper, the effects of bias temperature instability, including negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI), on the soft error rate are analyzed. The key charge value and delay are considered synthetically. Firstly, how to change the two factors under BTI effect is analyzed, and the model of delay affected by BTI is derived. This paper introduces the mechanism of the change of key charge, and then discusses the combination of two factors into the evaluation of soft error rate (SER), and deduces the SER calculation model incorporating the critical charge value. A method of introducing the change of delay into electrical shielding is proposed. The effectiveness and accuracy of evaluating SER by synthesizing two factors considering BTI effect are verified by experiments on ISCAS89 reference circuit.
【作者单位】：上海电力学院计算机科学与技术学院;同济大学软件学院;安徽工程大学计算机与信息学院;
【基金】：国家自然科学基金(61432017,61404092) 上海电力学院人才启动基金(K-2013-017) 上海高校青年教师资助计划项目(Z2015-074) 上海市科委地方能力建设项目(15110500700)~~
【分类号】：TN406

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