高深宽比的TSV电镀铜填充技术研究

发布时间：2018-02-28 02:16

本文关键词： TSV 电镀仿真无孔洞填充保形填充高深宽比三维封装　出处：《中国科学院大学(中国科学院工程管理与信息技术学院)》2017年硕士论文　论文类型：学位论文

【摘要】：TSV(Through Silicon Via)技术是穿透硅通孔技术的缩写,简称硅通孔技术,是三维集成电路中堆叠芯片实现互连的一种新的技术方案。使用TSV工艺的产品,可以获得更好的电性能,实现低功耗、低噪声、更小的封装尺寸和多功能化,适应消费类电子产品的发展需求,是微电子技术未来发展的一种趋势。本文在COMSOL软件TSV电镀模块的基础上给出了一个含两种添加剂的TSV电镀仿真模型,并且利用实验验证了该仿真模型,同时根据实验结果进一步优化了仿真参数。通过对仿真过程的研究,可以直观的了解TSV电镀填充过程,对优化电镀工艺有一定的帮助。电镀铜填充是TSV技术的关键工艺,如何实现高深宽比的TSV的电镀铜填充一直是业界的难点问题。影响TSV电镀填充效果的因素有很多,比如TSV的尺寸、形貌,种子层的厚度、连续性,预处理工艺等。本文主要从电镀药液以及电镀的工艺条件这两个方面来研究TSV填充工艺。针对孔径10μm、孔深100μm的TSV,在12寸晶圆上实现了10x100μmTSV的无孔洞填充,并且保证过电镀铜层厚度满足后续工艺的要求。另外针对孔径30μm、孔深100μm的TSV的保形填充也做了一些研究,实现了较快的填充速率和较好的电镀覆盖率,能满足实际工艺的要求。本文旨在通过工艺的优化调整,得出一套稳定且经济的TSV填充的方法,从而提升TSV技术的良率,并降低工艺成本,为TSV技术的量产应用做出一些贡献。
[Abstract]:TSV(Through Silicon via technology is the abbreviation of through through silicon hole technology. It is a new technology scheme for interconnecting stacked chips in 3D integrated circuits. Using TSV technology, we can obtain better electrical performance and achieve low power consumption. Low noise, smaller package size and multi-function to meet the development needs of consumer electronics, This paper presents a simulation model of TSV electroplating with two additives on the basis of COMSOL software TSV electroplating module, and verifies the simulation model by experiments. At the same time, according to the experimental results, the simulation parameters are further optimized. Through the study of simulation process, the TSV electroplating filling process can be intuitively understood, which is helpful to the optimization of electroplating process. Electroplating copper filling is the key technology of TSV technology. How to realize electroplated copper filling of TSV with high aspect ratio has always been a difficult problem in the industry. There are many factors that affect the effect of TSV electroplating filling, such as the size, morphology, thickness and continuity of seed layer of TSV. Pretreatment process, etc. In this paper, the filling process of TSV was studied from the aspects of electroplating solution and electroplating process conditions. For TSVs with pore diameter of 10 渭 m and pore depth of 100 渭 m, 10 x 100 渭 mTSV void filling was realized on a 12-inch wafer. In addition, some research on conformal filling of TSV with pore diameter of 30 渭 m and hole depth of 100 渭 m has been done to achieve faster filling rate and better electroplating coverage. The purpose of this paper is to obtain a stable and economical method of TSV filling through the optimization and adjustment of the process, so as to improve the yield of TSV technology, reduce the process cost, and make some contributions to the mass production and application of TSV technology.
【学位授予单位】：中国科学院大学(中国科学院工程管理与信息技术学院)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN405

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