基于磷化铟材料的三端电子器件建模研究

发布时间：2018-02-28 09:10

本文关键词： InP HEMT 小信号模型大信号模型　出处：《电子科技大学》2016年硕士论文　论文类型：学位论文

【摘要】：InP基高电子迁移率晶体管(HEMT)由于自身具有高的电子迁移率、高的功率增益、低的噪声系数以及低功耗等特点,成为毫米波单片集成电路(MMIC)以及太赫兹单片集成电路(TMIC)领域最理想的三端电子器件之一。而在MMIC或者TMIC的设计过程中,建立准确的器件模型是至关重要的。本文基于自主研发的InP基HEMT器件,利用多种测试手段获取器件的直流性能、交流性能、脉冲性能,综合研究了器件模型的由来并建立了准确的小信号模型。随后研究了陷阱电荷给器件带来的一些影响。最后在前面两部分的研究内容的基础上利用EEHEMT模型,对器件的大信号模型进行了研究,从而获得了一个较为准确的器件大信号模型。取得的研究成果如下:1.根据对InP HEMT器件原理的综合分析,利用传统的16个参数的HEMT器件小信号模型,优化了提取本征参数的算法。在Dambrine提出的本征Y参数公式基础上,直接推导了器件模型的本征元件参数,相比较Dambrine引入一个假设条件而得到的计算结果更为精确。2.由于InP HEMT器件本身固有的一些效应,在某些偏置电压下测得的S参数会发生一些反常的现象。此时传统16个参数的小信号模型无法拟合。根据对器件物理和二端口网络知识的分析,引入两个特殊的支路进入传统的小信号模型。根据传统模型和新模型的对比,可以看出新模型能更好地模拟器件的小信号特性。3.对于HEMT器件存在的陷阱电荷问题,通过脉冲IV测试装置对器件输出电流的测试,表征了输出电流受脉冲宽度和栅端静态电压的影响规律。从而揭示了器件内部的陷阱电荷对电流崩塌现象的作用机制,为下一步建立大信号模型中对器件陷阱电荷的考虑提供了理论基础。4.针对国内缺乏大信号模型指导电路设计的现状。以EEHEMT模型作为基础,利用IC-CAP软件来对器件的大信号模型参数进行提取,然后在ADS软件工具里进行优化仿真,最终建立了一个较为准确的In P HEMT器件的大信号模型,该模型能够很好地拟合器件的直流性能和交流性能。为下一步InP HEMT器件在MMIC电路中的设计打下了基础。
[Abstract]:Because of its high electron mobility, high power gain, low noise coefficient and low power consumption, InP based high electron mobility transistors (HEMTs) have many advantages, such as high electron mobility, high power gain, low power consumption and so on. It has become one of the most ideal three-terminal electronic devices in the field of millimeter-wave monolithic integrated circuit (MMC) and terahertz monolithic integrated circuit (THz). In the design of MMIC or TMIC, It is very important to establish an accurate device model. Based on the self-developed InP based HEMT device, the DC performance, AC performance and pulse performance of the device are obtained by a variety of test methods. The origin of the device model is comprehensively studied and an accurate small-signal model is established. Then some effects of trap charge on the device are studied. Finally, the EEHEMT model is used on the basis of the previous two parts of the research. The large signal model of the device is studied, and a more accurate large signal model of the device is obtained. The research results are as follows: 1. According to the comprehensive analysis of the principle of InP HEMT device, The algorithm of extracting intrinsic parameters is optimized by using the traditional small-signal model of 16-parameter HEMT devices. Based on the intrinsic Y parameter formula proposed by Dambrine, the intrinsic component parameters of the device model are derived directly. The calculated results are more accurate than those obtained by introducing a hypothetical condition into Dambrine. 2. Because of some inherent effects of InP HEMT devices, Some abnormal phenomena will occur in the S parameters measured under some bias voltages. At this time, the traditional small-signal model of 16 parameters can not be fitted. Based on the analysis of device physics and two-port network knowledge, Two special branches are introduced into the traditional small-signal model. According to the comparison between the traditional model and the new model, it can be seen that the new model can better simulate the small-signal characteristics of the device. By measuring the output current of the device with pulse IV, the effect of the output current on the pulse width and the static voltage at the gate end is characterized. Thus, the mechanism of the trap charge acting on the current collapse is revealed. This paper provides a theoretical basis for the consideration of device trap charge in the next big signal model. 4. Aiming at the lack of large signal model to guide the circuit design in China, the paper takes the EEHEMT model as the foundation. The large signal model parameters of the device are extracted by using IC-CAP software, and then optimized and simulated in the ADS software tool. Finally, a more accurate large signal model of in P HEMT device is established. The model can fit the DC performance and AC performance of the device, which lays a foundation for the next design of InP HEMT device in MMIC circuit.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386

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