三维系统级封装内垂直互连的高频电磁特性研究与设计

发布时间：2018-03-01 02:05

本文关键词： 三维集成电路系统级封装硅通孔电源完整性镜像-模式混合算法高频电磁串扰电磁屏蔽结构去嵌入测试　出处：《浙江大学》2015年博士论文　论文类型：学位论文

【摘要】：在集成电路与系统低功耗、高性能和超小型化封装发展趋势下,三维集成电路及其系统级封装(以下简称：三维系统级封装)已被广泛的认为具有很大的应用潜能。然而三维系统级封装比二维封装结构复杂,导致内部互连电磁干扰益加严重。针对现阶段三维系统级封装中互连面临的高频电磁干扰问题,本论文着重封装基板参数的快速算法优化、转接板的电磁特性精确建模、电磁屏蔽结构设计及去嵌入式测试平台设计四个方面的创新研究,并取得了以下的成果。1)针对基板封装垂直互连结构的信号/电源完整性问题,利用解析算法计算电源地平面的地阻抗,提出了新的镜像算法,提高了高频段解析算法的收敛速度。在此基础上,提出了镜像-模式混合算法,该算法在收敛速度和计算准确度方面优于传统模式算法,在计算资源与速度方面优于通用全波算法。基于这种快速算法计算出的地阻抗,本文将带有互连长线效应和过孔寄生参数的完整基板回路等效电路模型进行了拓展和验证。2)针对三维系统级封装中转接板内部的硅通孔进行高频电磁特性精细建模。在硅通孔基本物理等效电路建模的基础上,引入金属-氧化层-半导体结构的精细建模方法,进一步提出金属-半导体结构的应用条件和对应的等效模型。特别是,提出硅转接板衬底内地TSV和硅衬底有欧姆接触或肖特基接触时的高频等效电路模型。3)基于金属-半导体直接接触的精细模型,本文提出利用重掺杂环结构形成地TSV和硅衬底直接欧姆接触,实现了提高四端口传输线屏蔽效能的目的,改善效果最高可达10dB。进而提出等效电导率区域建模方法,分析该结构的适用和失效条件。以大规模阵列TSV为例,提出了地TSV直接接触硅衬底结构的设计规范,再进一步提出和利用水平再布线层实验验证屏蔽结构设计理念的正确性,并取得了最高可达20dB的串扰噪声抑制效果。4)本文提出了基于冗余阵列TSV屏蔽结构的精确去嵌入方案,兼容于现有TSV工艺。这种冗余TSV屏蔽结构可显著减小垂直TSV和水平RDL之间的电磁串扰,仿真结果显示该方案可提高去嵌入精度达十几个百分点,具有较高实用性。
[Abstract]:With the development trend of integrated circuit and system with low power consumption, high performance and super miniaturization, Three-dimensional integrated circuits and their system-level packaging (hereinafter referred to as three-dimensional system-level packaging) have been widely considered to have great application potential, but three-dimensional system-level packaging is more complex than two-dimensional packaging structure. This paper focuses on the optimization of the parameters of the substrate and the accurate modeling of the electromagnetic characteristics of the switching board. The paper studies the design of electromagnetic shielding structure and the design of de-embedded test platform, and makes the following achievements. 1) aiming at the signal / power integrity problem of substrates packaging vertical interconnection structure, Based on the calculation of the ground impedance of the ground plane of the power supply, a new mirror image algorithm is proposed, which improves the convergence speed of the analytical algorithm in high frequency band. On the basis of this, a hybrid mirror-mode algorithm is proposed. The proposed algorithm is superior to the conventional mode algorithm in convergence speed and accuracy, and is superior to the universal full-wave algorithm in computing resources and speed. In this paper, the equivalent circuit model of complete substrate circuit with long interconnect effect and parasitic parameters through holes is extended and verified. Based on the basic physical equivalent circuit modeling of silicon through hole, The fine modeling method of metal-oxidation-semiconductor structure is introduced, and the application conditions and corresponding equivalent models of metal-semiconductor structure are proposed. A high frequency equivalent circuit model. 3 based on metal-semiconductor direct contact between TSV and Si substrate with ohmic contact or Schottky contact is proposed. In this paper, the direct ohmic contact between TSV and Si substrate formed by heavily doped ring structure is proposed to improve the shielding efficiency of four-port transmission lines, and the maximum effect can be up to 10 dB. Furthermore, an equivalent conductivity region modeling method is proposed. The application and failure conditions of this structure are analyzed. Taking large-scale array TSV as an example, the design criterion of ground TSV direct contact silicon substrate structure is proposed. Furthermore, the correctness of the design concept of shield structure is verified by horizontal rewiring layer experiment. The crosstalk noise suppression effect of up to 20 dB is achieved. 4) in this paper, an accurate de-embedding scheme based on redundant array TSV shielding structure is proposed. This redundant TSV shield structure can significantly reduce the electromagnetic crosstalk between vertical TSV and horizontal RDL. The simulation results show that the scheme can improve the de-embedding accuracy by more than ten percentage points and has a higher practicability.
【学位授予单位】：浙江大学
【学位级别】：博士
【学位授予年份】：2015
【分类号】：TN405

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