硅基中红外光开关器件的研究

发布时间：2018-03-01 14:35

本文关键词： 集成光学硅光子学中红外悬浮波导中红外光开关　出处：《浙江大学》2015年硕士论文　论文类型：学位论文

【摘要】：近年来,集成光学的研究已经从近红外波段延伸到了中红外波段,特别是硅基中红外的研究是当前中红外集成光学研究的热点。结合CMOS工艺及优点,在硅片上设计制作各种中红外波导器件,这将在片上中红外光谱学、化学传感、环境监测等领域有着巨大的应用潜力。本文基于上述思想,提出了几种中红外波导光开关器件的设计思路和实验实现方法,具体内容分为以下几个方面： 1、根据微光机电系统(Micro Electro Mechanical Optical Systems, MEMOS)中的欧拉·伯努力栋梁方程,设计和分析了一种工作在中红外波段的基于悬浮波导定向耦合器的光开关器件。该开关利用静电力和机械形变的方式对悬浮波导进行调节,从而改变耦合系数,控制输出光场,实现开关功能。 2、开展了硅基中红外悬浮波导定向耦合光开关的实验,采用两次光刻、干法和湿法刻蚀制作悬浮式硅基定向耦合波导结构,初步完成器件制作工艺等相关参数的论证,并提出了实验中存在的不足和改进的建议；同时搭建了一个中红外测试平台。 3、利用相变材料二氧化钒的介质/金属相变特性,提出了一种基于等离子波的新型中红外光开关,它基于模式变换机理,可实现在2-6μm的超宽波段都能工作的超短光开关器件,对4μm波长,仅一个波长长的器件消光比就可以达到14.3dB。
[Abstract]:In recent years, the research of integrated optics from the near infrared band extends to the mid infrared band, especially the research of infrared silicon is a hotspot in infrared integrated optical research. Combining CMOS technology and advantages, design the production of optical waveguide devices on a silicon wafer, it will be in infrared spectroscopy, chemical the sensor, the field of environmental monitoring has great potential.
Based on the above ideas, this paper presents several design ideas and experimental realization methods of the infrared waveguide optical switch devices. The specific contents are divided into the following aspects:
1, according to the micro electromechanical system (Micro Electro Mechanical Optical Systems, MEMOS) Euler Bernoulli beams in the equation, the design and analysis of a work in the mid infrared optical switch suspended waveguide directional coupler based on the switch by electrostatic and mechanical deformation way to adjust the suspension to waveguide. Change the coupling coefficient, control the output light field, realize the switch function.
2, carry out the infrared directional coupling waveguide optical switch based on silicon suspension in the experiment, using two lithography, making suspended silicon directional coupling structure of dry and wet etching, the completion of the preliminary production process parameters of the device's argument, and puts forward the experimental problems and suggestions for improvement; at the same time build a an infrared test platform.
3, the use of two vanadium oxide phase change material dielectric / metal phase transition characteristic, put forward a new type of infrared switch based on plasma wave, its mode transformation based on the mechanism can realize the 2-6 m ultrashort ultra wide band can work on optical switch devices, 4 m wavelength, only one wavelength the extinction ratio can reach 14.3dB.

【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN214

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