图形化金属基底上的石墨烯CVD生长研究

发布时间：2018-03-01 19:41

本文关键词： 石墨烯 CVD 图形化铜/镍复合薄膜金属防腐　出处：《华中科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：石墨烯因其优异的电学、热学、机械、光学等性能而引起广泛关注,通常采用CVD工艺在过渡金属(如铜、镍等)基底上生长大面积、高质量的石墨烯薄膜,然后通过石墨烯转移和石墨烯图形化等工艺步骤,将石墨烯应用于器件结构中。但是,复杂的石墨烯转移和石墨烯图形化过程会对石墨烯的质量产生一定的破坏,不利于石墨烯优异性能的应用。在预图形化的催化基底上原位生长石墨烯,可以避免后续的石墨烯转移和图形化过程,有效提高器件应用中石墨烯的质量,为石墨烯器件的实现提供了一种有效地技术路径。本文主要研究利用CVD方法在铜、镍薄膜及铜/镍复合薄膜基底上图形化生长石墨烯。首先采用光刻、溅射、剥离工艺在SiO2/Si制备预图形化的铜膜、镍膜和铜/镍复合薄膜基底,然后利用CVD方法在预图形化的金属薄膜基底上选择性生长石墨烯。本文预先通过改变CVD生长参数(压强、气氛等)来探究不同生长参数对石墨烯质量的影响,接着选择合适的CVD生长参数在图形化的金属薄膜基底上生长高质量的石墨烯。利用SEM、XRD、拉曼光谱、AFM等分析测试手段对生长的石墨烯及石墨烯生长过程中的基底进行表征。通过对比在铜膜、镍膜和铜/镍复合薄膜基底上石墨烯的生长差异,我们发现在相同的生长参数下,铜/镍复合薄膜基底的晶粒尺寸最大,表面最光滑,且在铜/镍复合薄膜基底上生长的石墨烯层数最少,缺陷最少。随后我们对石墨烯在铜/镍复合薄膜基底上的生长机理进行了研究,我们认为在铜/镍复合薄膜基底中下层的镍膜充当了缓冲层,使上层铜膜质量更高,有利于大面积、单层石墨烯的生长。最后,我们将制备的石墨烯/金属复合结构置于0.5mol/L的过硫酸铵溶液中进行腐蚀,发现覆盖有石墨烯的金属基底的腐蚀速度明显较裸露的金属基底慢,初步说明石墨烯可以有效地保护下层金属不受腐蚀。
[Abstract]:Graphene has attracted much attention because of its excellent electrical, thermal, mechanical and optical properties. Generally, graphene thin films with large area and high quality have been grown on transition metals (such as copper, nickel, etc.) by CVD process. Then graphene is applied to the device structure through graphene transfer and graphene graphics. However, the complex graphene transfer and graphene graphics process will destroy the quality of graphene. The in-situ growth of graphene on a pre-graphed catalytic substrate can avoid the subsequent graphene transfer and graphing process, and improve the quality of graphene in the device application. In this paper, graphene is graphically grown on Cu, Ni and Cu / Ni composite film substrates by CVD. Firstly, graphene is fabricated by photolithography and sputtering. Pre-patterned copper film, nickel film and copper / nickel composite film substrate were prepared by stripping process at SiO2/Si. Then graphene was selectively grown on the pre-patterned metal film substrate by CVD method. In this paper, the growth parameters (pressure) of CVD were changed in advance. To explore the effects of different growth parameters on the quality of graphene, Then the high quality graphene was grown on the graphene substrate with suitable growth parameters. The growth of graphene and graphene substrate during the growth process of graphene and graphene were investigated by means of CVD, Raman spectroscopy and other analytical methods. Characterization. By comparing the copper film, The growth of graphene on the substrate of nickel film and copper / nickel composite film was different. We found that the grain size of copper / nickel composite film substrate was the largest and the surface was the most smooth under the same growth parameters. The growth mechanism of graphene on Cu / Ni composite thin film substrate was studied, and the number of graphene layers was the least and the defects were the least on the Cu / Ni composite film substrate, and the growth mechanism of graphene on Cu / Ni composite film substrate was studied. We think that the nickel film in the lower layer of the copper / nickel composite thin film substrate acts as a buffer layer, which makes the upper copper film higher quality and is conducive to the growth of large area, monolayer graphene. The prepared graphene / metal composite structure was corroded in 0.5 mol / L ammonium persulfate solution. It was found that the corrosion rate of the metallic substrate covered with graphene was significantly slower than that of the bare metal substrate. It is shown that graphene can effectively protect the lower layer metal from corrosion.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.055

【相似文献】