基于MEMS技术硅磁敏三极管差分结构制作及特性研究

发布时间：2018-03-02 01:21

  本文关键词： 集成化 硅磁敏三极管差分结构 MEMS技术 磁灵敏度 温度系数　出处：《黑龙江大学》2015年硕士论文　论文类型：学位论文

【摘要】：本文在分析立体结构硅磁敏三极管基本结构、工作原理和特性基础上,给出集成化硅磁敏三极管差分结构,该集成化结构由两个相反磁敏感方向的硅磁敏三极管(T-1管和T-2管)和集电极负载电阻构成,包括一个发射极(E)、两个基极(B1、B2)、两个集电极(C1、C2)和两个集电极负载电阻(RL1、RL2)。理论分析给出,该结构能够实现外加磁场测量且磁灵敏度得到提高,根据基本结构,采用ATLAS软件构建硅磁敏三极管差分结构仿真模型,分别研究基区长度L和基区宽度w对集成化硅磁敏三极管差分结构磁特性的影响,实现结构尺寸优化。基于上述,本文采用MEMS技术在P型100晶向双面抛光高阻单晶硅衬底上制作硅磁敏三极管差分结构集成化芯片。室温条件下,通过采用半导体特性分析系统(KEITHLEY 4200)、磁场发生器系统(CH-1)和高低温试验箱(奥贝斯GDJS-100LG-G),分别对单个硅磁敏三极管和硅磁敏三极管差分结构集成化芯片进行IC-VCE特性、磁特性和温度特性测试。当VDD=10.0 V,IB=8.0 mA时,基区长度L为150μm的单个硅磁敏三极管和硅磁敏三极管差分结构集成化芯片的集电极电压绝对磁灵敏度分别为259 mV/T和443mV/T,集电极电压相对温度系数分别为116.0 ppm/℃和54.4 ppm/℃,实验结果表明硅磁敏三极管集成化差分结构可以提高磁灵敏度和改善温度特性。在此基础上,研究基区长度对集成化芯片IC-VCE特性和磁特性的影响,当VDD=6.0 V,IB=8.0 mA时,基区长度分别为120μm、150μm和180μm硅磁敏三极管差分结构集成化芯片集电极电压绝对磁灵敏度为435 mV/T、390 mV/T和327 mV/T,故基区长度为120μm的集成化芯片具有较优的磁敏特性。
[Abstract]:Based on the analysis of the basic structure, working principle and characteristics of the stereoscopic silicon magnetic sensing transistor, the differential structure of the integrated silicon magnetic sensing transistor is presented in this paper. The integrated structure consists of two silicon magnetically sensitive transistors in opposite directions: T-1 and T-2) and collector load resistors, including an emitter, two base electrodes, two base electrodes, two collector electrodes, two collector electrodes, two collector electrodes, and two collector loaded resistors, RL1 and RL2.The theoretical analysis shows that, The structure can realize the measurement of external magnetic field and the magnetic sensitivity is improved. According to the basic structure, the differential structure simulation model of silicon magnetic sensitive transistor is constructed by using ATLAS software. The effects of base length L and base width w on the magnetic characteristics of the differential structure of integrated silicon magnetic-sensitive transistor are studied respectively to optimize the structure size. In this paper, MEMS technology is used to fabricate the differential structure integrated silicon magnetic-sensitive transistor on P-type 100 crystal double-sided polished high resistance monocrystalline silicon substrate. At room temperature, the silicon magnetic-sensitive transistor is fabricated at room temperature. By using the semiconductor characteristic analysis system KEITHLEY 4200, the magnetic field generator system CH-1) and the high and low temperature test box (OBES GDJS-100LG-GN), the IC-VCE characteristics of the single silicon magnetic-sensitive transistor and the differential structure integrated chip of the silicon magnetic-sensitive transistor are carried out, respectively. Testing of magnetic and temperature characteristics. When the VDD=10.0 vane is 8.0 Ma, The collector voltage absolute magnetic sensitivity of a single silicon magnetic sensing transistor with a base length L of 150 渭 m and that of a differential integrated silicon magnetic transistor is 259 mV/T and 443 MV / T, respectively. The relative temperature coefficient of collector voltage is 116.0 ppm / 鈩，

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