具有垂直站立结构的二维层状过渡金属硫属化合物的制备及光电应用

发布时间：2018-03-02 03:13

本文关键词： 层状材料 MoS2 MoSe2 异质结光电探测器　出处：《苏州大学》2015年硕士论文　论文类型：学位论文

【摘要】：二维层状过渡金属硫属化合物由于具有类石墨烯的特殊结构,因此拥有很多优异的机械、光学和电学性能。其中典型的MoS2、MoSe2等已经被广泛应用于光催化制氢、锂离子电池、场效应晶体管及光电探测器等领域。近年来,虽然关于此类材料的研究取得了很大进展,但还存在一些问题需要解决:首先,二维层状过渡金属硫属化合物的大面积生长技术还不成熟,即使厘米级别的生长也不容易实现。另外,目前报道的基于MoS2、MoSe2等光电探测器虽然有了较强的光电响应,但灵敏度和响应速度不高,严重影响了该类光电探测器的实际应用。因此,如何实现二维层状过渡金属硫属化合物的大面积可控制备及提高基于该类材料的光电探测器的性能具有重要意义。在本论文中我们制备了垂直站立于衬底表面的MoS2和MoSe2的薄膜。并通过特殊的器件结构设计,制备了基于该类薄膜的高性能光电探测器。主要研究内容如下:(1)利用磁控溅射技术直接在Si衬底上生长了二维层状的MoS2和MoSe2薄膜,并通过高温退火的方法提高了薄膜的结晶性。该种方法可实现薄膜的大面积制备,且制备过程方便、可控。此外,使用该种方法制备的薄膜具有垂直于衬底站立的特殊结构。(2)制备了Si/MoS2异质结光电探测器。该光电探测器具有可见光到近红外的超宽响应范围,高达约1013 cmHz1/2W-1的探测度和约3μs的响应速度,这两项性能参数都是目前报道的基于MoS2光电探测器的最高数值。此外,该光电探测器还显示了良好的稳定性。(3)制备了以石墨烯作为透明电极的Si/MoSe2异质结光电探测器。石墨烯的加入,既提高了载流子的收集效率,又使得载流子能够更快的从MoSe2薄膜传输到电极上,极大地提高了该异质结光电探测器的性能。该光电探测器能够检测频率为1 MHz的脉冲光,响应时间高达约270 ns,远远地超过了其他同类光电探测器。
[Abstract]:Two dimensional layered transition metal chalcogenides is due to the special structure of graphene, so have a lot of excellent mechanical, optical and electrical properties. The typical MoS2, MoSe2 has been widely used in photocatalytic hydrogen production, lithium ion battery, field effect transistor and photodetector and other fields. In recent years, despite the progress of studies on this material, but there are still some problems to be solved: first, a large area of two-dimensional layered transition metal chalcogenide compound growth technology is not mature, even cm level growth is not easy to achieve. In addition, based on the reported MoS2, MoSe2 photoelectric detector although there has been strong photoelectric response but the sensitivity and response speed is not high, seriously affect the practical application of this kind of photoelectric detector. Therefore, how to achieve a large area of controllable two-dimensional layered transition metal chalcogenides Has an important significance in preparation and improve the performance of the photoelectric detector based on materials. In this paper we prepared films stand upright in the surface of the substrate of MoS2 and MoSe2 were prepared by the device. And the special structural design, preparation of high performance photoelectric detector based on this kind of films. The main contents are as follows: (1) directly grown on Si substrates MoS2 and MoSe2 two-dimensional layered thin film by magnetron sputtering, and the crystallinity of the films was improved by high temperature annealing method. The method can realize the large area thin film preparation, and the preparation process is convenient and controllable. In addition, the use of the thin films prepared by different methods with a special structure standing perpendicular to the substrate. (2) preparation of photoelectric detector Si/MoS2 heterojunction. The photoelectric detector with visible light to near infrared ultra wide response range, detection and up to about 1013 cmHz1/2W-1 3 s. This should speed, two performance parameters are reported the highest number of MoS2 photoelectric detector based on photoelectric detector. In addition, this also shows good stability. (3) was prepared by using graphene as a photoelectric detector of the transparent electrode of Si/MoSe2 heterojunction. The addition of graphene, both to improve the collection efficiency of the carrier again, the carrier can quickly from the MoSe2 film transmission to the electrode, greatly improves the performance of photoelectric detector of the heterojunction. The photoelectric detector can detect light pulse frequency is 1 MHz, the response time of up to about 270 ns, far more than other similar detectors.

【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN15;O613.51

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