GAN基LED电子束流辐照效应的研究

发布时间：2018-03-03 09:39

本文选题：GaN基LED　切入点：电子束流辐照　出处：《天津工业大学》2017年硕士论文　论文类型：学位论文

【摘要】：随着半导体器件应用的不断发展,越来越多的光电子器件需要工作在辐照极端恶劣的环境中,这对光电子器件抗辐照能力提出了更高的要求。GaN材料作为第三代半导体的代表,在许多光电器件方面具有重要应用。氮化镓(GaN)材料具有宽的直接带隙、强的原子键、高的热导率、化学稳定性好等诸多优点,在光电子、高温大功率器件和高频微波器件等方面都有重要应用,而且采用蓝光GaN与荧光粉复合生成白光是制作白光LED的重要方法。同时GaN材料具有较强的抗辐照能力,在未来空间探测以及核技术中GaN器件必将具有广阔的应用前景,因此研究GaN材料及器件的辐照效应意义重大。本文主要研究了不同能量和剂量的电子束流辐照对GaN基LED的光电学性能的影响,重点研究GaN基LED的峰值波长、光强、色温、色纯度、工作电流等参数受电子束辐照效应影响。本文主要做了以下研究:1.利用2.5GeV电子束流辐照GaN基LED时,随着辐照的剂量的不断增加LED的光功率呈指数下降,工作电流不断升高,发光波长出现了蓝移,而且经点亮辐照的LED,在辐照后工作性能更加稳定,这主要是因为辐照过程中产生了不同类型的缺陷,同时辐照中存在点亮自退火的过程。2.利用1.5MeV电子束流辐照白光LED灯板时,辐照使LED的光效增高16%,峰值波长发生蓝移、色温升高、色纯度下降,这主要是因为辐照过程使荧光粉的基质(YAG)与稀土元素发光中心(Ce3+)的距离减小,发光中心数量增多以及极化效应使GaN材料的禁带宽度变大等作用所引起的。3.通过蒙特卡洛方法对高能电子辐照过程中电子能量的传输以及射程分布进行了模拟,并基于以上模拟理论建立简化的随机模型,用CASINO软件对辐照过程中电子运行轨迹进行了仿真。仿真结果与理论分析结果吻合较好,表明使用该方法模拟高能电子辐照能量传输过程具有一定的实用价值。
[Abstract]:With the continuous development of application of semiconductor devices, optoelectronic devices and more radiation needs to work in extreme environments, the anti radiation ability of optoelectronic devices is put forward higher requirements of.GaN materials as the representative of the third generation semiconductor, has many important applications in optoelectronic devices.. Gan (GaN) material has a direct bandgap the width of atomic bond strength, high thermal conductivity, good chemical stability and other advantages in optoelectronics, high-temperature and high-power devices and high frequency microwave devices are widely used, and the use of blue phosphors and GaN composite white light generation is an important method for white LED. At the same time, GaN has strong anti radiation materials ability, GaN devices will have broad application prospects in future space exploration and nuclear technology, so the research significance of the irradiation effect of GaN materials and devices. This paper mainly research The influence of the photoelectric electron beam of different energy and dose of irradiation on GaN based LED flow properties, peak wavelength, focus on the GaN based LED light intensity, color temperature, color purity, operating current and other parameters affected by electron beam irradiation. This paper mainly studies the following: 1. using 2.5GeV electron beam irradiation GaN based on LED, with the dose of irradiation increased light power LED decreases exponentially, working current increases, the wavelength of the light blue shift occurred, and the light irradiation of LED after irradiation in the work performance is more stable, this is mainly because of the different types of defects produced during irradiation, and light since the irradiation annealing process using.2. 1.5MeV electron beam irradiation white LED lamp panel, the irradiation causes the optical efficiency of LED increased 16%, the peak wavelength blue shift, color temperature, color purity decline, this is mainly because of the irradiation process fluorescence. Powder matrix (YAG) and rare earth luminescent center (Ce3+) distance decreases, the increase in the number of luminescence centers and the polarization effect caused by the band gap of GaN material becomes larger the role of the.3. simulation by Monte Carlo method on transmission electron energy of high-energy electron irradiation in the process and the range distribution was carried out, and based on the above simulation a simplified stochastic model theory, the simulation of electron trajectory during irradiation was carried out with CASINO software. The simulation results agree well with the results of theoretical analysis and simulation results indicate that the method of high energy electron irradiation energy transfer process has a certain practical value.

【学位授予单位】：天津工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN312.8

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