硅化镁LED材料的制备与器件的设计研究

发布时间：2018-03-05 03:23

  本文选题：环境友好半导体　切入点：磁控溅射　出处：《贵州大学》2015年硕士论文　论文类型：学位论文

【摘要】：环境友好型半导体材料硅化镁(Mg2Si)是一种窄带隙间接半导体材料。目前,微电子行业主要基于Si材料进行应用,在Si衬底上生长Mg2Si薄膜的工艺,可以很好地与Si工艺兼容,因此Mg2Si/Si异质结结构具有重大的研究价值。本文采用磁控溅射方法分别在Si衬底、绝缘衬底上制备环境友好型Mg2Si薄膜,研究溅射Mg膜厚度对Mg2Si薄膜质量的影响,在此基础上围绕Mg2Si基异质结LED器件制备工艺进行研究,并对Mg2Si薄膜的电学、光学性质进行研究。首先,在室温下采用磁控溅射方法,在Si衬底上沉积Mg膜,绝缘玻璃衬底上沉积Si膜和Mg膜,然后在低真空(10-1Pa-10-2Pa)氛围下进行热处理制备Mg2Si薄膜。XRD、SEM结果表明,400℃下退火4h,制备出单一相的Mg2Si薄膜,且制备的Mg2Si薄膜晶粒致密、均匀和连续,表面平整,结晶度良好。其次,研究了Mg膜厚度对Mg2Si半导体薄膜生长的影响及Mg膜厚度与退火后生成的Mg2Si薄膜厚度之间的关系。结果表明,Mg膜厚度在2.52μm、2.72μm时,表现出了良好的结晶度和平整度,Mg2Si薄膜的厚度随Mg厚度的增加而增加,约为Mg厚度的0.9-1.1倍。该研究将对以Mg2Si薄膜为基设计器件起重要指导作用。最后,研究了Mg2Si基异质结发光器件的制备,在Si衬底上制备了Mg2Si/Si、Si/Mg2Si/Si异质结LED器件,采用四探针测试系统、半导体特性分析仪、稳态/瞬态荧光光谱仪等设备对Mg2Si/Si、Si/Mg2Si/Si异质结进行电学、光学性质研究。结果表明:Mg2Si薄膜的电阻率和方块电阻随着Mg2Si厚度的增加而减小;Mg2Si/Si、Si/Mg2Si/Si异质结表现出了较好的单向导通特性,且Si/Mg2Si/Si双异质结结构的导通电压比较大,约为3 V;Mg2Si/n-Si异质结器件在波长为1346 nm时,光致发光强度最大。在绝缘衬底上制备的Mg2Si薄膜,在波长为1346 nm时,光致发光强度最大;对比不同衬底上制备Mg2Si薄膜的光致发光,在高纯石英衬底制备的Mg2Si薄膜发光性能更好,且具有红外单色发光特性。
[Abstract]:Mg _ 2Si) is a narrow band gap indirect semiconductor material. At present, the microelectronics industry is mainly based on Si materials, and the process of growing Mg2Si thin films on Si substrates can be compatible with Si process. In this paper, environment-friendly Mg2Si thin films were prepared on Si substrates and on insulating substrates by magnetron sputtering. The effect of mg film thickness on the quality of Mg2Si films was studied. On this basis, the fabrication process of Mg2Si based heterojunction LED devices was studied, and the electrical and optical properties of Mg2Si thin films were studied. Firstly, mg films were deposited on Si substrates by magnetron sputtering at room temperature. Si and mg films were deposited on insulating glass substrates. Mg2Si films were prepared by heat treatment in low vacuum (10-1Pa-10-2Pa) atmosphere. The results showed that Mg2Si films were prepared by annealing at 400 鈩，

本文编号：1568539