碳化硅MOSFET电容及宽温度范围内的静态参数测试

发布时间：2018-03-07 02:14

本文选题：碳化硅　切入点：MOSFET　出处：《华北电力大学》2015年硕士论文　论文类型：学位论文

【摘要】：功率SiC MOSFET器件具有高击穿场强、高耐受温度、低损耗、高频率等优点,已经成为新型功率半导体器件研究开发的主流。随着其应用范围不断扩展,SiC MOSFET静态特性参数和电容参数导致串并联器件均压均流不平衡的问题也越发受到重视,SiC MOSFET驱动电路设计以及一次回路的频率分析也与这些参数息息相关。因此在不同温度范围内测量器件的静态参数和电容参数愈显重要。本文针对于Cree公司生产的型号为C2M0080120D的N沟道增强型SiCMOSFET器件,分析阐述SiC MOSFET器件的工作原理和物理机制,总结场效应管静态参数和电容参数测试的相关标准并提炼出针对性的测试方法,利用Agilent B1505A以及高低温试验箱搭建了实验平台,对Cree生产的SiC MOSFET的电容参数以及宽温度范围内的静态特性参数展开测试,并对可能产生的误差进行修正以确保测试结果的准确性。分析对比不同温度下,SiC器件静态特性参数的变化规律及其性能的改变,并从物理机制上解释各参数随着温度的变化规律。本文结合国网智能电网研究院项目"1200V SiC MOSFET器件制备及应用特性关键技术研究”,重点研究了器件在宽温度范围内的特性参数变化,为建立完善准确的SiC MOSFET器件仿真模型,以及后续研发的器件参数和可靠性测试提供具体方法。
[Abstract]:Power SiC MOSFET devices have the advantages of high breakdown field strength, high temperature tolerance, low loss, high frequency, etc. It has become the mainstream in the research and development of new power semiconductor devices. With the continuous expansion of the application range of sic MOSFET static characteristic parameters and capacitance parameters, the problem of voltage and current sharing imbalance of series-parallel devices has been paid more and more attention to. The design of MOSFET drive circuit and the frequency analysis of primary circuit are also closely related to these parameters. Therefore, it is more and more important to measure the static parameters and capacitance parameters of devices in different temperature range. This paper is aimed at the type produced by Cree Company. N-channel enhanced SiCMOSFET device, C2M0080120D, This paper analyzes the working principle and physical mechanism of SiC MOSFET device, summarizes the relevant standards of FET static parameter and capacitance parameter testing, and extracts the relevant testing methods. The experimental platform is built by using Agilent B1505A and high and low temperature test box. The capacitance parameters of SiC MOSFET produced by Cree and the static characteristic parameters of wide temperature range are tested. The possible errors are corrected to ensure the accuracy of the test results. The variation of the static characteristic parameters and the performance of sic devices at different temperatures are analyzed and compared. The variation of parameters with temperature is explained in terms of physical mechanism. In this paper, the key technologies of fabrication and application characteristics of 1200V SiC MOSFET devices are studied in the wide temperature range in the light of the smart grid research project "1200V SiC MOSFET device fabrication and key technology research". Changes in the characteristic parameters of, It provides a concrete method for establishing an accurate simulation model of SiC MOSFET device, as well as testing the device parameters and reliability of the following research and development.
【学位授予单位】：华北电力大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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