1200V RC Trench IGBT的设计

发布时间：2018-03-07 04:17

本文选题：功率半导体器件　切入点：逆导型IGBT　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：IGBT(Insulated Gate Bipolar Transistor),作为第三代电力电子产品,是当前功率半导体中最重要的器件之一。IGBT以其优秀的综合性能广泛应用于家用电器、交通运输、电机控制、智能电网等诸多领域。自发明以来,小型化、集成化一直是IGBT的一个重要发展趋势。在很多应用场合中,IGBT通常需要反向并联一个二极管来实现续流,由于处于不同的封装中,不可避免地引入了寄生电阻、电感等,影响电路性能。单片集成二极管的RC IGBT可以消除这些寄生参数的影响,提高器件的可靠性。由于我国的IGBT起步较晚,制造工艺相对落后,RC IGBT产品都是如英飞凌、ABB等国外大公司推出的。国内至今没有自主品牌的产品,相关学术研究也非常缺乏。本文基于此,进行1200V RC Trench IGBT的设计与分析,为进一步的研究以及生产制造提供参考。本文主要内容如下:1、结合Trench IGBT理论,对RC Trench IGBT进行介绍,分析其工作原理、Snapback现象、正向阻断情况以及开关特性。从原理和模型出发,深入研究影响RC IGBT的Snapback现象的原因并提出解决方案。2、设计1200V RC Trench IGBT的工艺流程,通过增加一张掩膜板来完成集电极N型区域的制造。结合工艺,进行RC Trench IGBT的元胞结构、终端结构以及版图的设计。所设计的1200V RC Trench IGBT不存在Snapback现象,击穿电压满足设计要求,导通压降低于2.5V,阈值电压4V-5.5V。
[Abstract]:IGBT(Insulated Gate Bipolar Transistor, as the third generation power electronic product, is one of the most important devices in the current power semiconductor. Since the invention of smart grid, miniaturization and integration has been an important development trend of IGBT. The parasitic resistance, inductance and so on are inevitably introduced to affect the circuit performance. The RC IGBT of monolithic integrated diode can eliminate the influence of these parasitic parameters and improve the reliability of the device. The manufacturing process is relatively backward and the RC IGBT products are all developed by large foreign companies such as Infineon ABB. There are no independent brands in our country, and the relevant academic research is also very lacking. Based on this, this paper designs and analyzes the 1200V RC Trench IGBT. The main contents of this paper are as follows: 1. In combination with Trench IGBT theory, RC Trench IGBT is introduced, its working principle is analyzed, including Snapback phenomenon, forward blocking and switching characteristics. In this paper, the causes of Snapback phenomenon affecting RC IGBT are studied in depth, and the solution. 2. The process flow of 1200V RC Trench IGBT is designed. By adding a mask plate to complete the manufacture of N region of collector, the cellular structure of RC Trench IGBT is carried out by combining the process. The design of terminal structure and layout. The 1200V RC Trench IGBT has no Snapback phenomenon, the breakdown voltage meets the design requirements, the on-voltage drop is lower than 2.5V, and the threshold voltage is 4V-5.5V.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8

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