150mm掺P硅衬底外延层的制备及性能表征

发布时间：2018-03-07 04:11

本文选题：硅外延层　切入点：均匀性　出处：《固体电子学研究与进展》2017年01期 　论文类型：期刊论文

【摘要】：为适应肖特基二极管降低正向导通电压和制造成本的需要,采用150mm的掺P硅抛光片为衬底,通过化学气相沉积制备高阻硅外延层。利用傅里叶变换红外线光谱、电容-电压测试等方法对外延电学参数进行了测试和分析。对平板式外延炉的流场、热场与硅外延层厚度、电阻率均匀性的关系进行了研究。在此基础上采用周期变化的气流在外延层生长前反复吹扫腔体,进一步降低了非主动掺杂的不良影响,结合优化的流场和热场条件,最终制备出表面质量优、均匀性好的外延层,满足了厚度和电阻率不均匀性都小于1.0%的目标需求。采用该外延材料制备的肖特基二极管的正向导通电压降低了17.1%,显著减小了功耗,具备了良好的应用前景。
[Abstract]:In order to meet the need of Schottky diode to reduce the forward conduction voltage and manufacture cost, a high resistance silicon epitaxial layer was prepared by chemical vapor deposition on a 150mm silicon doped silicon polishing wafer. Fourier transform infrared spectroscopy (FTIR) was used. The electrical parameters of epitaxy are measured and analyzed by means of capacitance-voltage measurement. The flow field, thermal field and thickness of silicon epitaxial layer in flat plate type epitaxial furnace are studied. The relationship of resistivity uniformity is studied. On the basis of this, periodically varying airflow is used to sweep the cavity repeatedly before growth of the epitaxial layer, which further reduces the adverse effects of non-active doping, and combines with the optimized flow field and thermal field conditions. Finally, an epitaxial layer with excellent surface quality and good uniformity was prepared. Both thickness and inhomogeneity of resistivity are less than 1.0%. The forward on-voltage of Schottky diodes prepared by the epitaxial material is reduced by 17.1. the power consumption is significantly reduced and has a good application prospect.
【作者单位】：中国电子科技集团公司第四十六研究所;
【分类号】：TN304

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