紫外LED辅助的4H-SiC化学机械抛光

发布时间：2018-03-09 04:05

本文选题：H-SiC晶片　切入点：化学机械抛光　出处：《纳米技术与精密工程》2017年05期 　论文类型：期刊论文

【摘要】：在4H-SiC晶片的化学机械抛光(CMP)体系中加入紫外LED系统,研究TiO_2颗粒、紫外LED光功率、抛光温度和抛光液pH值对4H-SiC晶片抛光性能的影响规律,以获得较高的材料去除速率(MRR)和原子级光滑表面,满足LED器件对衬底材料表面的严格要求.结果表明,采用平均粒径25 nm、质量分数为2%的TiO_2颗粒,可显著提高MRR,且减少微划痕等表面缺陷;增大紫外LED功率,MRR随之增大;升高抛光温度,MRR快速提高,并可降低抛光所得表面粗糙度;在CMP体系中加入紫外体系可增加羟基自由基数量,抛光液pH值较低(2.2)也可维持较高MRR值,且抛光液pH值超过10时MRR值大幅提高.采用原子力显微镜(AFM)、光学显微镜来考察4H-SiC晶片抛光后的表面质量.基于各因素的影响规律,最终获得表面粗糙度为0.058 6 nm的4H-SiC晶片表面,且MRR达到352.8 nm/h.
[Abstract]:In the chemical mechanical polishing of 4H-SiC wafer (CMP) UV system with LED system, TiO_2 particles, LED UV light power, polishing temperature and polishing effects of pH value on 4H-SiC wafer polishing performance, to obtain a higher material removal rate (MRR) and atom level smooth surface, meet LED devices on the surface of the substrate material of the strict requirements. The results showed that the average particle size of 25 nm, the mass fraction of TiO_2 2% particles, can significantly improve the MRR and reduce the micro scratch surface defects; increase the UV LED power, MRR increases; increasing polishing temperature, MRR increased rapidly, and can reduce the surface polishing roughness; adding UV system in CMP system can increase the number of hydroxyl radicals, polishing liquid with low pH value (2.2) can also maintain a high MRR value, and pH value of slurry is more than 10 MRR value increased significantly. By using atomic force microscope (AFM), optical microscopy study The surface quality of 4H-SiC wafers is polished. Based on the influence rules of each factor, the surface of 4H-SiC wafer with a surface roughness of 0.0586 nm is obtained, and MRR reaches 352.8 nm/h..

【作者单位】：清华大学摩擦学国家重点实验室;深圳清华大学研究院深圳市微纳制造重点实验室;广东省光机电一体化重点实验室;
【基金】：科学挑战专题资助项目(JCKY2016212A506-0504) 国家自然科学基金资助项目(51675348)
【分类号】：TN305.2

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