一种0.6V CMOS基准电压源的设计

发布时间：2018-03-09 04:17

  本文选题：低压基准电压源　切入点：CMOS　出处：《微电子学》2017年02期 　论文类型：期刊论文

【摘要】：基于低压技术,利用亚阈值区MOS管代替寄生BJT管,设计了一种工作在低电源电压下的基准电压源,并对基准电压进行了温度补偿。采用TSMC 0.18μm CMOS工艺对电路进行了设计和仿真。仿真结果显示:电路正常工作的最低电源电压为0.6V,当电源在0.6~2.0V范围内变化,基准输出电压仅变化了1.75mV;在0.6V电源电压下,-20℃~125℃温度范围内,温度系数为2.8×10~(-5)/℃,电源抑制比为52.47dB@10kHz,整个电路的功耗仅为12μW。
[Abstract]:Based on low-voltage technology, a reference voltage source working at low power supply voltage is designed by using sub-threshold MOS instead of parasitic BJT. The circuit is designed and simulated by using TSMC 0.18 渭 m CMOS process. The simulation results show that the minimum supply voltage of the circuit is 0.6V, and when the power supply is in the range of 0.62V, the circuit is simulated. The reference output voltage changes only 1.75 MV, the temperature coefficient is 2.8 脳 10 ~ (-1) ~ (-5) / 鈩，

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