太赫兹互补金属氧化物半导体场效应管探测器理论模型中扩散效应研究

发布时间：2018-03-09 14:26

本文选题：互补金属氧化物半导体场效应管探测器　切入点：太赫兹　出处：《物理学报》2017年12期 　论文类型：期刊论文

【摘要】：针对基于经典动力学理论传统模型中忽略扩散效应的问题,通过对基于玻尔兹曼理论的场效应管传输线模型的理论分析,建立了包含扩散效应的太赫兹互补金属氧化物半导体(CMOS)场效应管探测器理论模型,研究扩散效应对场效应管电导及响应度的影响.同时,将此模型与忽略了扩散效应的传统模型进行了对比仿真模拟,给出了两种模型下的电流响应度随温度及频率变化的差别.依据仿真结果,并结合3σ原则明确了场效应管传输线模型中扩散部分省略的依据和条件.研究结果表明:扩散部分引起的响应度差异大小主要由场效应管的工作温度及工作频率决定.其中工作频率起主要作用,温度变化对差异大小影响较为微弱;而对于工作频率而言,当场效应管工作频率小于1 THz时,模型中的扩散部分可以忽略不计;而当工作频率大于1 THz时,扩散部分不可省略,此时场效应管模型需同时包含漂移、散射及扩散三个物理过程.本文的研究结果为太赫兹CMOS场效应管理论模型的精确建立及模拟提供了理论支持.
[Abstract]:Aiming at the problem of neglecting the diffusion effect in the traditional model based on classical dynamics theory, the transmission line model of FET based on Boltzmann theory is analyzed theoretically. A theoretical model of terahertz complementary metal oxide semiconductor CMOS detector with diffusion effect is established to study the effect of diffusion effect on conductance and responsivity of FET. The model is compared with the traditional model which neglects the diffusion effect, and the difference of current responsivity with temperature and frequency under the two models is given. Combined with the 3 蟽 principle, the basis and condition of omitting the diffusion part in the transmission line model of FET are clarified. The results show that the difference of the responsivity caused by the diffusion part is mainly caused by the working temperature and frequency of the FET. Decisions. In which the frequency of work plays a major role, The temperature change has a weak effect on the difference, but for the frequency, the diffusion part in the model can be ignored when the working frequency is less than 1 THz, but the diffusion part can not be omitted when the working frequency is greater than 1 THz. In this case, the FET model should include three physical processes: drift, scattering and diffusion. The results of this paper provide theoretical support for the accurate establishment and simulation of the theoretical model of THz CMOS FET.
【作者单位】：北京理工大学光电学院;首都师范大学物理系;
【基金】：国家自然科学基金(批准号:61377109)资助的课题~~
【分类号】：TN386

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