半导体与多种异质结构的磁性与调控

发布时间：2018-03-10 11:27

本文选题：稀磁半导体　切入点：多铁异质结构　出处：《山东大学》2017年硕士论文　论文类型：学位论文

【摘要】：稀磁半导体材料在电子器件的制造中有着巨大的应用价值,它结合了磁性材料的存储功能以及半导体材料的逻辑处理功能。传统的稀磁半导体材料通常具有优秀的低温性能,但实际应用要求尽可能提高材料的居里温度,增大材料的室温可操作性是一项重要任务。电场调控材料的磁性在信息存储技术领域有着深远的物理意义,越来越多的研究者致力于研究新型的电控磁现象以及研发可用于电控磁领域的新型材料。多铁异质结构和稀磁半导体材料一直都是电控磁领域的研究热点内容。自从研究者Ohno H等人[101]最早在实验中观察到电场改变了(InMn)As的磁性特征后开始,对稀磁半导体材料的开发和电控磁现象的研究一直持续了几十年。在科学技术发展要求的背景之下,本论文主要是针对几种稀磁半导体材料以及具有实现电场调控磁性可能性的材料展开初步的研究。研究中需要解决的主要问题有:1.成功制备出多铁异质结构并能够利用电场调控其磁性;2.首先能成功制备出具有较高居里温度的稀磁半导体,其次研究电场对其磁性的影响,初步探究稀磁半导体电控磁性的可能性。本论文的绪论部分主要介绍了稀磁半导体材料的研究进展,着重介绍了砷化镓基稀磁半导体以及锑化铟基稀磁半导体的研究进展以及稀磁半导体材料电控磁现象的研究进展。还介绍了多铁异质结构的电控磁现象的研究进展。之后概述了当前薄膜样品的主要制备技术以及对样品进行测试和表征的方法。本论文的主要实验工作如下:多铁异质结构部分主要是通过磁控溅射方法在铁电性衬底PMN-PT上生长制备了[FeCo/Ag]5纳米磁性多层膜。将铁电材料与铁磁性材料相结合,制备[FeCo/Ag]5/PMN-PT出多铁异质结构,研究体系的磁电耦合效应。通过对体系施加电场,研究电场对异质结构体系磁性的影响和调控。实验中发现电场的施加可以使[FeCo/Ag]5/PMN-PT体系的磁性产生较大的变化,可以通过对电压的调节实现对[FeCo/Ag]5/PMN-PT多铁异质结构磁性的调控。之后研究了电压对[FeCo(60s)/Ag(2s)]5/PMN-PT异质结构的剩余磁化强度的影响,实现了电压可对结构的剩磁进行调控。之后稀磁半导体部分的研究主要介绍了对砷化镓(GaAs)基稀磁半导体和锑化铟(InSb)基稀磁半导体材料磁性的实验工作。在砷化镓(GaAs)基稀磁半导体材料的研究中:1.向几组砷化镓块状晶体中通过离子注入的手段分别单独注入了不同剂量的铬(Cr)元素和不同剂量的钛(Ti)元素后,我们发现在室温条件下,样品即具有了磁性。并且对每种注入元素而言,材料的磁性都是随着离子注入剂量的增大而增大;对样品的结构进行了表征,可以说是成功地获得了室温具有磁性的砷化镓(GaAs)基稀磁半导体材料;2.对进行了离子注入的样品GaCrAs和GaTiAs进行了快速低温退火处理,测量退火对样品磁性的影响,发现退火会使离子注入的样品的磁性减弱。在锑化铟(InSb)基稀磁半导体材料的研究中:1.向几组锑化铟块状晶体中通过离子注入的方法分别单独注入了不同剂量的铬(Cr)元素和不同剂量的钛(Ti)元素后,我们发现在室温条件下,样品即具有了磁性。并且对每种注入元素而言,材料的磁性都是随着离子注入剂量的增大而增大;对样品的结构进行了表征,可以说是成功地获得了室温具有磁性的锑化铟(InSb)基稀磁半导体材料;3.对进行了离子注入的样品InCrSb和InTiSb进行了快速低温退火处理,测量退火对样品磁性的影响,发现退火会使离子注入的样品的磁性减弱。
[Abstract]:Dilute magnetic semiconductor material has great application value in the manufacture of electronic devices, it combines the storage function of magnetic material and the logical processing function of semiconductor materials. The traditional dilute magnetic semiconductor materials usually have excellent low temperature performance, but the actual application requirements as much as possible to improve the material Curie temperature, room temperature increase material maneuverability is an important task. The magnetic control material has a physical field of profound significance in the field of information storage technology, more and more researchers working in the electronic magnetic phenomena research and development model can be used to control magnetic field of new materials. Multiferroic heterostructures and dilute magnetic semiconductor materials has been a hot research area the content of electronic magnetic field. Since the researchers Ohno H et al [101] was first observed in experiments of electric field change (InMn) to magnetic characteristics of As, in dilute magnetic semiconductor The research and development of electronic magnetic material phenomena continued for decades. Under the development of science and technology requirements of the background, this paper focuses on several dilute magnetic semiconductor materials and has a preliminary research on the realization of electric control of magnetic materials. The possibility of the main problems to be solved in the research are: 1. successfully prepared more iron heterogeneous structure and be able to use the electric field magnetic; 2. first successfully prepared diluted magnetic semiconductor with high Curie temperature, followed by the study of effect of electric field on the magnetic properties, preliminary study of possibility of diluted magnetic semiconductor electronic magnetic. The introduction part mainly introduces the research progress of dilute magnetic semiconductor material, is introduced progress of magnetic semiconductors and research progress of InSb Based Diluted Magnetic Semiconductors and diluted magnetic semiconductor electronic magnetic phenomena of GaAs based rare also introduced. Research progress of electronic magnetic phenomena. The heterogeneous structure of iron after summarizing the main method of the current system of sample preparation and sample testing and characterization. The main research work of this paper are as follows: multiferroic heterostructures is the main part of the magnetron sputtering method in ferroelectric substrate grown on PMN-PT [FeCo/Ag]5 nano magnetic multilayer film prepared. Combining the ferroelectric and ferromagnetic materials, the preparation of [FeCo/Ag]5/PMN-PT multiferroic heterostructures, the magnetoelectric effect of the system. By applying the electric field to the system, study the effect of electric field on the heterostructure system and magnetic control. Experiments showed that the applied magnetic [FeCo/Ag]5/PMN-PT can make the system produce large changes in electric field. Can the voltage adjusting control of [FeCo/Ag]5/PMN-PT magnetic multiferroic heterostructures. Studying the voltage on [FeCo (60s) /Ag (2S) Effect of residual magnetization of]5/PMN-PT heterostructures, the voltage can be adjusted on the structure of the remanence. After diluted magnetic semiconductor research part mainly introduces on GaAs (GaAs) based diluted magnetic semiconductor (InSb) and indium antimonide based diluted magnetic semiconductor magnetic experimental work. Research on GaAs (GaAs) diluted magnetic semiconductor material: 1. to several groups of GaAs bulk crystal by ion implantation method separately injected different doses of chromium (Cr) elements and different dosage of titanium (Ti) elements, we found that at room temperature, the sample has a magnetic. And for each kind of injection element, material the magnetic is increased with the dose of ion implantation; samples were characterized, can be said to be successful at room temperature with magnetic properties of GaAs (GaAs) diluted magnetic semiconductor materials; 2. were from Injection of the samples GaCrAs and GaTiAs were rapid annealing temperature, annealing effect measurement on magnetism of the samples, it is found that the magnetic annealing causes ion implanted samples decreased. In InSb (InSb) on the base of diluted magnetic semiconductor materials: 1. to several groups of InSb crystal block through ion implantation method separately injection of different doses of chromium (Cr) elements and different dosage of titanium (Ti) elements, we found that at room temperature, the sample has a magnetic. And for each kind of injection elements, magnetic materials are increased with the dose of ion implantation; the structures of the samples were characterized. Can be said to be successful at room temperature with magnetic InSb (InSb) diluted magnetic semiconductor materials; a rapid low temperature annealing treatment was carried out on 3. samples of InCrSb and InTiSb ion implantation, annealing on magnetic measurement The effect of sex is that annealing will weaken the magnetic properties of the sample implanted by ion.

【学位授予单位】：山东大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304

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