ZnO基紫外探测器的制备及其结构的优化

发布时间：2018-03-10 13:08

本文选题：射频磁控溅射　切入点：ZnO基薄膜　出处：《长春理工大学》2015年硕士论文　论文类型：学位论文

【摘要】：ZnO薄膜是一种直接宽带隙的半导体材料(室温下禁带宽度约为3.37 eV),具有环保、分布广泛、抗辐射能力强等优点。通过在薄膜中掺入Mg元素,MgZnO薄膜的禁带宽度可在3.3 eV-7.8 eV范围内调节。ZnO基薄膜材料的相关研究及其器件性能的优化受到了人们的广泛关注。本论文主要阐述ZnO基薄膜生长,ZnO基紫外光电探测器的制备,并从提升器件性能的角度出发,生长高质量的ZnO基薄膜和优化紫外探测器结构。主要研究工作如下:(1)利用射频磁控溅射设备在石英衬底(Si O2)上制备了高质量的ZnO基薄膜,研究了薄膜的结晶性和光学性能,在此基础上制备了金属-半导体-金属(MSM)结构的ZnO基紫外探测器,对器件的性能进行了测量和研究。(2)利用管式炉对MSM结构的Mg0.2Zn0.8O紫外探测器进行退火,通过X射线衍射、紫外/可见吸收和透射光谱、响应度光谱和I-V曲线等测量手段对样品进行了性能表征。结果分析表明700°C可显著提高Mg0.2Zn0.8O紫外探测器的响应度。(3)利用射频磁控溅射制备双层薄膜结构的紫外探测器,这种薄膜结构完善了基础物理理论,并实现了响应度峰值的可控移动。(4)为了克服MSM结构的较低响应度和较高暗电流的缺陷,设计并制备了“三明治”结构的ZnO紫外探测器,实现了降低暗电流的同时,响应度增加了六十倍左右。
[Abstract]:ZnO thin film is a kind of semiconductor material with direct wide band gap (the band gap is about 3.37eV ~ (-1) at room temperature, which is environmentally friendly and widely distributed. By doping mg elements into MgZnO thin films, the bandgap of the films can be adjusted in the range of 3.3 eV-7.8 EV, and the optimization of the device properties has attracted much attention. In this paper, the preparation of ZnO based UV photodetectors is described. High quality ZnO based thin films and optimized UV detector structures were grown from the point of view of improving device performance. The main work is as follows: 1) High quality ZnO thin films were prepared on quartz substrate by radio frequency magnetron sputtering equipment (RF magnetron sputtering equipment). The crystallinity and optical properties of the thin films were studied. On the basis of this, ZnO based UV detectors with metal-semiconductor-metal structure were prepared. The properties of the device were measured and studied. (2) the Mg0.2Zn0.8O ultraviolet detector with MSM structure was annealed by tube furnace, and the X-ray diffraction, ultraviolet / visible absorption and transmission spectra were used. The responsivity spectra and I-V curves were used to characterize the properties of the samples. The results show that 700 掳C can significantly improve the responsivity of Mg0.2Zn0.8O UV detectors. In order to overcome the defects of lower responsivity and higher dark current of MSM structure, a sandwich structure ZnO UV detector is designed and fabricated. At the same time, the responsivity is increased by about 60 times while the dark current is reduced.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN23

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