石墨烯—硅混合纳米光子集成波导及器件研究

发布时间：2018-03-13 00:34

本文选题：硅光子学　切入点：石墨烯　出处：《浙江大学》2015年硕士论文　论文类型：学位论文

【摘要】：硅光子学是下一代高速低功耗芯片技术极有前景的解决方案,然而因其实现全硅有源光器件的困难性,硅光子学常常需要其他材料加以辅助。石墨烯恰好是这样一种理想的CMOS兼容光电功能材料。考虑到石墨烯的二维特性,将其与硅光子器件相集成增加光与石墨烯的相互作用也有其必要性。因此,对石墨烯-硅混合纳米光子集成波导及器件的理论与实验研究具有重要意义。对石墨烯光电导率模型的研究直接导致了其在光调制器、光电探测器、表面等离子体光子学等领域的应用。人们对石墨烯与半导体尤其是硅的接触特性的研究大多局限于电学以及空间光的角度。本论文发现了石墨烯-硅混合纳米光子集成波导中的一种超低阈值(～0.1 mW)、偏振相关的石墨烯与硅接触导致的光致诱导透明效应,这种效应使得集成光路的全光、低功率、宽带、远程与本地调制、传感、开关成为可能。反射式波导集成石墨烯光电探测器缩短了吸收区的长度,在一定程度上解决了石墨烯波导集成造成器件长度过长导致工作速度受限的问题,有望实现高速工作。由于具有非对称金属结构,该器件已实现了宽带零偏压下工作,1,550nm处零偏压响应度高达～0.2 mAW-。石墨烯表面等离子体波导可以进一步提高集成光路的集成度及光与石墨烯的的相互作用。具有槽形硅衬底的可调石墨烯-硅混合纳米表面等离子体波导,由于其不需要对石墨烯进行图形化,因而避免了许多有害的边缘效应。该波导具有限制能力强、损耗相对较低、群速度低等特性,还能够实现宽中红外频段(30 THz～45 THz)的低偏压相位调制和强度调制,用于超小型的宽带光强度调制器和光开关。强的光物质相互作用及可调慢光特性在许多应用比如非线性中都受到关注。
[Abstract]:Silicon photonics is a promising solution for the next generation of high speed and low power chip technology. However, it is difficult to realize all silicon active optical devices. Silicon-photonics often requires assistance from other materials. Graphene is such an ideal optoelectronic material for CMOS compatibility. Considering the two-dimensional properties of graphene, It is also necessary to integrate it with silicon photonic devices to increase the interaction between light and graphene. It is of great significance for the theoretical and experimental study of graphene / silicon nanostructured photonic integrated waveguides and devices. The study of the photoconductivity model of graphene directly leads to its applications in photomodulators, photodetectors, photodetectors, photodetectors, photodetectors, photodetectors, photodetectors, photodetectors, and photodetectors. Applications of surface plasma photonics. The contact characteristics of graphene with semiconductors, especially silicon, are mostly confined to the angle of electricity and space light. An ultra-low threshold value of 0.1 MW ~ (-1) in an integrated waveguide, a photoinduced transparency effect caused by the contact of polarization-dependent graphene with silicon. This effect makes it possible to integrate all-optical, low-power, wideband, remote and local modulation, sensing and switching. To some extent, the problem that the length of the device is too long and the working speed is limited due to the integration of graphene waveguide is solved, which is expected to realize high speed operation. The device has achieved a zero bias responsivity up to 0.2 mAW- at 1 ~ 550nm at wideband zero bias voltage. The graphene surface plasma waveguide can further improve the integration of the integrated optical path and the interaction between light and graphene. Tunable graphene / silicon nanocomposite surface plasma waveguides on silicon substrates, Since graphene does not need to be graphed, many harmful edge effects are avoided. The waveguide has the characteristics of strong limiting ability, relatively low loss, low group velocity, etc. It can also realize low bias phase modulation and intensity modulation of 30 THz~45 THZ in wide and middle infrared band. For ultra-small broadband light intensity modulators and optical switches. Strong optical matter interactions and adjustable slow-light characteristics have attracted attention in many applications such as nonlinearity.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN256

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