含忆阻功能与记忆电路特性研究

发布时间：2018-03-14 12:55

本文选题：忆阻器　切入点：振荡电路　出处：《南京邮电大学》2017年硕士论文　论文类型：学位论文

【摘要】：忆阻器作为一种非易失性存储器和第四种电路基本无源元件,从它被提出时起就受到人们广泛关注,并且逐渐成为电路、材料、生物等领域的研究热点。本论文就忆阻器及忆阻模型基本特性、MLC串并联电路、含忆阻器文氏振荡电路以及忆阻器在神经网络中的应用展开研究,主要内容包括:研究了忆阻器、忆容器和忆感器等记忆元件特性,介绍了增加型和降低型两种基本的忆阻模拟电路。具体研究了MLC串并联电路,分析其分压、分流等基本电学特征。进而着重研究了含忆阻模拟器的文氏振荡电路电路特性,具体分析了该振荡电路的频谱变化。研究结果表明,在主频区,含忆阻器后文氏桥振荡电路的频谱峰值幅度会降低,特别在于,主峰频率两倍左右的区域,其频谱上再次呈现一较小峰值。该现象呈现出的一些频谱结构的改变可能带来的影响还有待进一步探究。研究了基于Hodgkin-Huxley方程电路模型的数学原理以及基本特性,,探究了其中K~+、Na~+离子通道的忆阻器特性。H-H模型可以明显地反映出膜激发的正反馈功能,该方程是一个典型的非线性方程,在一定条件下,它存在多重态,这种多重态的存在及其非线性特性可以成功地解释可兴奋细胞膜激发现象以及动作电位产生。研究结果表明,通常情况下,K~+、Na~+离子通道具有忆阻器的许多类似特性,可以用相应的忆阻器模型对其进行仿真研究;着重研究了不同激励信号下,H-H电路模型的跨膜端口的响应特性,发现端口的跨膜电压、电流的v-i特性曲线会受到激励信号的种类、振幅、频率尤其是电路本身门变量n、m、h的初始值影响。所取得的研究结果对忆阻器在神经网络领域提供了一定的理论依据。
[Abstract]:As a kind of nonvolatile memory and 4th kinds of basic passive circuit components, amnesia has been paid more and more attention since it was put forward, and has gradually become a kind of circuit and material. In this paper, the basic characteristics of the resistor and the memory model, including the MLC series-parallel circuit, the Wenckler oscillating circuit and the application of the memristor in the neural network, are studied. The main contents are as follows: the main contents of this thesis are as follows: 1. The characteristics of memory components such as memory container and sensor are introduced. Two basic amnesia analog circuits are introduced. The MLC series-parallel circuit is studied in detail, and its partial voltage is analyzed. The basic electrical characteristics, such as shunt and so on, are studied in detail in this paper. The characteristics of the circuit with amnesia simulator are studied, and the spectrum variation of the circuit is analyzed in detail. The results show that, in the main frequency range, The peak amplitude of the frequency spectrum of the Venturi bridge oscillating circuit with amnesia will decrease, especially in the region where the main peak frequency is about twice the frequency. There is again a smaller peak value in the spectrum. The possible effects of some changes in the spectrum structure of the phenomenon need to be further explored. The mathematical principle and basic characteristics of the circuit model based on Hodgkin-Huxley equation are studied. In this paper, the characteristics of the memristor of K ~ + Na ~ + channel. H-H model can obviously reflect the positive feedback function of film excitation. This equation is a typical nonlinear equation. Under certain conditions, it has multiple states. The existence of this multiple state and its nonlinear properties can explain excitable membrane excitation and action potential production successfully. In general, the K ~ + Na ~ + channel has many similar characteristics of the resistive device, which can be simulated with the corresponding resistive model, and the response characteristics of the transmembrane port of the H-H circuit model under different excitation signals are emphatically studied. It is found that the v-i characteristic curve of the transmembrane voltage and current of the port is subject to the type and amplitude of the excitation signal, The frequency, especially the initial value of the gate variable n / m / h of the circuit itself, is affected. The results of the study provide a theoretical basis for the amnesia in the field of neural networks.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN60

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