图案化蓝宝石衬底及硅纳米线的制备

发布时间：2018-03-16 22:49

本文选题：图案化蓝宝石衬底　切入点：纳米压印　出处：《南京大学》2015年硕士论文　论文类型：学位论文

【摘要】：LED是一种节能环保的光源,具有光电转换效率高、使用寿命长、体积小等优点,因此被广泛应用于各种显示器的光源、车灯、交通信号灯等方面。另外,当基于InGaN/GaN的蓝光LED出现后,白光LED的制备变得简单易行。因此,LED在室内外照明灯领域可获得进一步的应用。随着碳纳米管的发现,一维纳米材料也受到了广泛的研究。由于硅材料具有4200 mAh/g的最高理论比容量,研究者们期望用硅来取代现在普遍使用的石墨来作为锂离子电池的负极材料以提高电池容量。然而,硅在电池充放电后容易因嵌锂前后体积变化过大而造成材料粉化。硅纳米线具有高深宽比、比表面积大、机械性能优异的特点,有可能克服以上缺点。此外,在超低压力气体检测、生物传感器、溶液离子浓度检测以及作为压印模板方面,硅纳米线都有着潜在的应用前景。因此,本文主要研究纳米图案化蓝宝石衬底和硅纳米线的制备。采用纳米压印技术制备纳米图案化蓝宝石衬底时主要采用的是硬质纳米压印模板。由于蓝宝石表面的翘曲,使得压印得到的纳米结构缺陷较多,同时压印模板也容易损坏,本文的第一个工作力图解决这两个问题。硅纳米线的传统制备方法包括气液固方法(Vapor-liquid-solid method, VLS)、激光烧蚀法、化学气相沉积法等,但这些方法成本高昂或者反应条件苛刻,且生长出的硅纳米线容易受到催化剂污染、生长过程难于控制。本文的第二部分工作力求采用新的工艺改变这些问题,并积极探求硅纳米线的实际应用。本文基于低成本、大面积的制备纳米图案的需求,做了以下的工作：利用复合纳米压印技术制备纳米图案化蓝宝石衬底。在压印过程中分别利用单层和双层胶压印方法,制备了刻蚀蓝宝石衬底的掩膜。以纳米压印胶为掩膜,分别利用湿法刻蚀和干法刻蚀两种方法制备纳米图案化蓝宝石衬底并比较了这两种方法的优缺点。最后发现用Ni为掩膜配合干法刻蚀,可以制备出比较好的结构。为了研究纳米图案化蓝宝石衬底对于蓝光LED性能的提升,我们利用MOCVD在平面蓝宝石衬底和纳米图案化蓝宝石衬底上分别制备了蓝光LED,并测试了这两种LED的性能。研究发现,纳米图案化蓝宝石衬底上的蓝光LED的性能相比于平片LED,在光致发光、电致发光等方面都有了明显的提升。分别以纳米压印技术和溅射镀膜技术为基础制备高深宽比的硅结构。我们利用溅射镀膜技术制备了大面积无序的金纳米结构。然后,以这种金纳米结构为基础,利用金辅助化学刻蚀制备了高深宽比的硅纳米孔洞结构。另外,我们以纳米压印技术为基础制备纳米图案,利用涂胶、压印、蒸发镀膜、举离等方法制备了周期性的硅纳米结构。然后通过溅射镀金,接着利用金辅助化学刻蚀制备了高深宽比的硅纳米线阵列。这种高深宽比的硅纳米结构在纳米压印模板、生物传感、锂离子电池的负极材料中都有着潜在的应用。本文分四个部分,绪论部分主要介绍了几种纳米加工和纳米压印技术。第二章首先简述了LED的发展历史及蓝光LED用图案化衬底结构的优点,然后概述了传统的方法以及纳米压印方法制备图案化结构。最后,实验部分详细记录了实验进展并得出结论。第三章研究了硅纳米线的制备,详细讨论了金催化辅助化学刻蚀的过程。第四部分是总结和展望。
[Abstract]:LED is a light source of energy saving and environmental protection, has high photoelectric conversion efficiency, long service life, the advantages of small size, light source, so it is widely used in all kinds of display lights, traffic lights and so on. In addition, when the InGaN/GaN based blue LED appears, white LED preparation becomes simple. Therefore, LED in the indoor and outdoor lighting field can be further applied. With the discovery of carbon nanotubes, nano materials have been widely studied. Due to the highest theory of silicon material has a specific capacity of 4200 mAh/g, the researchers expected to replace silicon anode materials with graphite are commonly used as lithium ion battery to improve battery capacity. However, silicon in the battery charge and discharge after after intercalation due to volume changes caused by excessive material powder. Silicon nanowires with high aspect ratio, large surface area, excellent mechanical performance characteristics, have May overcome the above disadvantages. In addition, in the ultra low pressure gas detection, biosensor, ion concentration detection as well as the imprint template, silicon nanowires have a potential application prospect. Therefore, this paper mainly studies the nano patterned sapphire and silicon nanowires were fabricated by nanoimprint lithography. Preparation of nano patterned sapphire when the substrate is mainly used in hard nano imprint template. Warping of the sapphire surface, nano structure defects makes the impression, but also easy to damage the imprint template, the first work of this paper tries to solve these two problems. The traditional preparation method of silicon nanowires including gas liquid solid (Vapor-liquid-solid method VLS) method, laser ablation, chemical vapor deposition, but these methods are expensive or harsh reaction conditions, the growth of silicon nanowires and vulnerable to catalysis Agent pollution, it is difficult to control the growth process. The second part of this work to the use of the new technology to change these problems, and actively explore the practical application of the silicon nanowires. Based on low cost, large area nano pattern needs to do the following work: the preparation of nano patterned sapphire substrate using composite nano imprint technology. Single and double glue imprint method were used in the stamping process and mask etching of sapphire substrate was prepared. The nano imprint glue as a mask, two kinds of method for wet etching and dry etching were used to prepare nano patterned sapphire substrate and compares the advantages and disadvantages of the two methods. Finally found Ni mask with dry etching can be prepared by a good structure. In order to study the nano patterned sapphire substrate to enhance the performance of LED for Blu ray, we use MOCVD in the plane of sapphire lining The bottom and nano patterned sapphire substrates were prepared by the blue LED, the performance of the two LED and tested. It is found that the properties of nano patterned sapphire substrates of blue LED compared to LED in plain film, photoluminescence, electroluminescence and other aspects have been significantly improved. With nano imprint technology and sputtering technology for preparing silicon structures with high aspect ratio based system. We use the sputtering of gold nano structure disorder of large area were prepared. Then, with the gold nano structure, high aspect ratio silicon nano pore structure were prepared by metal assisted chemical etching. In addition, our basic system the preparation of nano pattern with nano imprint technique for the use of glue, embossing, evaporation, lift etc. silicon nano periodic structures were prepared by sputtering. Then the gold, to prepare high aspect ratio by gold assisted chemical etching system The silicon nanowire arrays. The high aspect ratio of silicon nanostructures in nanoimprint lithography, biosensing, anode materials for lithium ion batteries have a potential application. This paper is divided into four parts, the introduction part mainly introduces several kinds of nanometer processing and nano imprint technology. The second chapter first introduces the advantages of a patterned substrate the structure of the history and development of blue LED LED, and then summarizes the preparation of patterned structure of traditional method and nano imprint method. Finally, the experimental part of a detailed record of the experimental progress and conclusion. The third chapter studies the preparation of silicon nanowires, gold catalysis assisted chemical etching process is discussed in detail. The fourth part is the summary and outlook.

【学位授予单位】：南京大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12;TB383.1

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