超高导热金刚石铜复合材料在GaN器件中的应用

发布时间：2018-03-16 23:38

  本文选题：金刚石铜　切入点：GaN芯片　出处：《半导体技术》2017年04期 　论文类型：期刊论文

【摘要】：金刚石铜具有高导热率和低膨胀系数,可用于大功率芯片的散热热沉。未做处理的金刚石表面非常光滑,不易附着其他金属,由于金刚石性质非常稳定,不容易被强酸和强碱进行表面处理。采用JG-01金刚石铜粗化处理液对金刚石进行粗化处理,而对铜无损伤,提升了金刚石表面结合力。金刚石铜镀层对金锡(AuSn)和锡铅(PbSn)焊料的润湿性满足GJB548B-2005要求。GaN功率放大器芯片采用金刚石铜热沉比铜钼铜热沉结温可以降低12℃。金刚石铜载板镀层润湿性良好,焊接后芯片底部的空洞率不大于3%,热沉焊接后空洞率不大于5%,满足高功率芯片散热要求。按照产品环境适应要求,对GaN功率放大器做了高低温冲击和机械振动两种环境筛选实验,最终满足可靠性考核要求。
[Abstract]:Diamond copper has high thermal conductivity and low coefficient of expansion, which can be used for heat sink of high power chip. The surface of untreated diamond is very smooth, and it is not easy to adhere to other metals. It is not easy to be treated by strong acid and alkali. The JG-01 diamond coarsening solution is used to roughen the diamond, but it has no damage to copper. The wettability of diamond copper coating on AuSnSn and PbSnSn) solders can meet the requirements of GJB548B-2005. The diamond copper heat sink can reduce 12 鈩，

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