新型GLSI弱碱性铜抛光液稳定性研究

发布时间：2018-03-17 17:19

本文选题：稳定性　切入点：弱碱性　出处：《半导体技术》2017年12期 　论文类型：期刊论文

【摘要】：随着极大规模集成电路(GLSI)技术节点逐渐降低至28 nm,多层铜布线化学机械抛光过程中弱碱性抛光液的稳定性成为人们研究的热点。以四乙基氢氧化铵作为pH调节剂,配制不同pH值的新型弱碱性抛光液,研究各组抛光液的pH值、粒径、Zeta电位以及铜去除速率、表面粗糙度和去除速率一致性随存放时间(0,12,24,36和48 h)的变化,并与KOH作为pH调节剂的抛光液进行了对比。结果表明,pH值、粒径、Zeta电位在存放时间内基本不变。pH值大于10时平坦化效果较差,pH值为9.0时,平坦化效果较好,0和48 h铜去除速率为530 nm/min和493.1 nm/min,抛光后铜表面粗糙度为0.718和0.855 nm,铜去除速率一致性为4.31%和4.54%,该抛光液加入双氧水后可以稳定存放48 h以上,可满足工业生产的要求。
[Abstract]:With the decrease of GLSI technology node to 28 nm, the stability of weakly alkaline polishing solution in the process of chemical-mechanical polishing of multilayer copper wiring becomes a hot topic. Tetraethylammonium hydroxide is used as pH regulator. A new type of weakly alkaline polishing solution with different pH values was prepared. The changes of pH value, Zeta potential, copper removal rate, surface roughness and removal rate consistency with storage time were studied. The results showed that the pH value, particle size and Zeta potential of KOH as pH regulator were basically unchanged during the storage period. The pH value was greater than 10:00 and the effect of flattening was poor when pH value was 9.0. The surface roughness of polished copper was 0.718 and 0.855 nm, and the consistency of copper removal rate was 4.31% and 4.54 nm. After adding hydrogen peroxide, the copper removal rate could be stably stored for more than 48 hours. Can meet the requirements of industrial production.
【作者单位】：河北工业大学电子信息工程学院;天津市电子材料与器件重点实验室;
【基金】：国家科技重大专项子课题资助项目(2016ZX02301003-004-007) 天津市自然科学基金资助项目(16JCYBJC16100) 河北省专业学位教学案例基金资助项目(KCJSZ2017008)
【分类号】：TN405

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