记忆元件的模拟器设计

发布时间：2018-03-18 04:12

本文选题：忆阻器　切入点：记忆元件　出处：《暨南大学》2016年硕士论文　论文类型：学位论文

【摘要】：记忆元件包括忆阻器、忆容器和忆感器,它们的提出是对经典电路理论的扩充。从2008年HP实验室发现了纳米级的忆阻器后掀起了记忆元件研究的热潮。然而忆阻器制作工艺复杂、实验环境严格苛刻,目前无法批量生产,而忆容器和忆感器甚至至今未能找到对应的实物,所以对于这些记忆元件的研究主要还是依赖于计算机辅助电路分析软件,因此研究记忆元件的模拟器成为一项重要的课题。本文首先全面探讨了记忆元件的本构方程,在此基础上对记忆元件的模拟器进行设计,包括忆阻器的流控型模拟器和压控型模拟器、忆容器的压控型模拟器和荷控型模拟器、忆感器的流控型模拟器和磁控型模拟器,以及所有模型的接地型接法和浮地型接法。然后对忆阻器-忆容器和忆阻器-忆感器转换电路进行分析,由此得到基于忆阻器的忆容器模拟器和忆感器模拟器的电路设计。更进一步地,本文对分数阶忆阻器?M进行研究,推导其数学方程,并得到一个通用的分数阶忆阻器模拟器,只要在输入端输入相应的参数就可以得到各种不同的分数阶忆阻器模拟器,简单方便快捷;并以0.5阶和0.9阶的分数阶忆阻器为代表对分数阶忆阻器进行了研究,得到了分数阶忆阻的输入输出、状态变量、忆阻值等波形。最后,采用常规电路元件对忆阻器模拟器进行实物搭建,通过PCB板焊接方式制作忆阻器模拟器,并通过示波器仿真验证,证明本文所设计的忆阻器模拟器是正确的。总之,本文对记忆元件模拟器的研究具有广泛的理论意义和实用价值。
[Abstract]:The memory element includes a resistor, a memory container and a memory sensor, They are an extension of the classical circuit theory. Since 2008, the discovery of nanoscale memristors in HP Labs has set off an upsurge in the research of memory components. However, the fabrication process of the devices is complex, and the experimental environment is strict. At present, there is no mass production, and the memory container and sensor can not even find the corresponding physical object so far, so the research of these memory elements mainly depends on the computer aided circuit analysis software. Therefore, studying the simulator of memory element becomes an important subject. Firstly, the constitutive equation of memory element is discussed, and then the simulator of memory element is designed. Including the flow control simulator and voltage control simulator of the resistor, the pressure control simulator and the load control simulator of the container, the flow control simulator and the magnetic control simulator of the sensor. And the grounding connection method and floating ground connection method of all models. Then, the conversion circuit of amnesizer-memory container and amnesizer-amnesia sensor is analyzed. The circuit design of the memory container simulator and the memory sensor simulator based on the resistive device is obtained. M carries on the research, deduces its mathematical equation, and obtains a general fractional order amnesia simulator, as long as input the corresponding parameter in the input end, can obtain each kind of different fractional order amnesia simulator, simple and convenient; In addition, the fractional order amnesia with 0.5 order and 0.9 order is taken as the representative, and the input and output of fractional order amnesia, the state variable, the value of memory resistance and so on are obtained. Finally, the input and output of fractional order amnesia, the state variable, the value of memory resistance and so on are obtained. The general circuit element is used to build the memristor simulator, and the PCB board welding method is used to make the memristor simulator. Through the oscilloscope simulation, it is proved that the memristor simulator designed in this paper is correct. In this paper, the study of memory element simulator has a wide range of theoretical significance and practical value.
【学位授予单位】：暨南大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN602

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