低维光电探测器与低温读出

发布时间：2018-03-19 19:34

  本文选题：低维半导体光电探测器　切入点：双势垒　出处：《华东师范大学》2017年硕士论文　论文类型：学位论文

【摘要】：半导体低维结构具有能带人工可剪裁性、量子尺寸效应、共振隧穿效应等多种内涵丰富而深刻的特殊现象和效应,成为推动半导体探测技术迅猛发展的重要动力。其中共振隧穿效应的超高工作速度和负微分电阻特性引起科研人员的研究兴趣。室温条件下低维光电探测器具有一定暗电流,常采用制冷来抑制,以提高器件灵敏度和探测信噪比。本文研究低维光电探测器的低温性能及读出:采用Crosslight Apsys仿真软件研究AlGaAs/InGaAs光电探测器载流子共振隧穿方式,级联阱中量子点结构光电探测器的暗电流,信噪比和探测率。研究光电探测器能带模型,低温Ⅰ-Ⅴ特性,光电流谱特性,光致发光特性等,进而分析温度对低维半导体光电探测器隧穿几率、能带位置、读出等性能的影响。通过文献调研和仿真手段分析低温CMOS电路,研究低温读出设计,通过Janis SHI液氦循环制冷测试系统测试了2×8读出电路42K的数模输出特性。
[Abstract]:Semiconductor low-dimensional structures have a variety of special phenomena and effects with rich and profound connotations, such as energy band artificial tailoring, quantum size effect, resonant tunneling effect and so on. It has become an important driving force to promote the rapid development of semiconductor detection technology. The ultra-high working speed and negative differential resistance characteristics of resonant tunneling effect have aroused the interest of researchers. The low-dimensional photodetectors have a certain dark current at room temperature. The low temperature performance and readout of low dimensional photodetector are studied in this paper. The carrier resonant tunneling mode of AlGaAs/InGaAs photodetector is studied by Crosslight Apsys simulation software. The dark current, signal-to-noise ratio (SNR) and detectivity of photodetectors with quantum dot structure in cascaded wells are studied. The energy band model of photodetectors, low temperature 鈪，

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