氧化石墨烯掺杂CNTS制备透明电极及其在OLED中的应用

发布时间：2018-03-20 03:35

本文选题：碳纳米管　切入点：氧化石墨烯　出处：《天津工业大学》2017年硕士论文　论文类型：学位论文

【摘要】：随着人们日常生活对于柔性显示器、触摸屏、太阳能电池和便携式储能电子器件等需求的不断上升,柔性可弯折透明导电薄膜(TCFs)的需求也正日益增大。传统发光器件的导电薄膜多采用铟锡氧化物(ITO)薄膜,通常由磁控溅射法制备,需要高真空环境,同时随着稀有金属铟的含量日渐减少使得ITO薄膜成本日益增加,并且ITO薄膜柔性较差,刚性易碎等因素都使得其在未来柔性显示领域受到极大限制。碳纳米管(CNTs)由于较高的电导率和优异的柔性,极高、极强的力学性能(约1-2 TPa的杨氏模量),刚度好,导热性能优异。一定量的碳纳米管沉积在透明基底上即可形成一层随机的网络结构,组成低面电阻、高透光性的透明电极。但由于一维材料的维度限制,CNTs所形成的网络结构是疏松多重搭接结构,其结构相对不稳定,因此其在基底上的附着力较差,同时一维搭接结构形成的电极表面粗糙度较高,不利于其在OLED等光电子器件当中的应用。而作为新兴的二维碳纳米材料的氧化石墨烯(GO)则具有很多优异的特性,平面状的结构本身具有非常高的平整度,可以对一维CNT网状的结构缺陷进行有效填补,并且由于其表面含有大量的含氧官能团,可以极大增强薄膜表面的润湿性,有利于进一步的溶液法制备器件,同时可以增大原始薄膜的表面功函数,利于载流子的注入等等。本文首先采用更易大规模生产的喷涂法制备性能优异的氧化石墨烯/碳纳米管(GO/CNTs)掺杂透明导电薄膜,分别从不同浓度掺杂以及不同GO片径分离掺杂的角度进行了探究,建立了载流子在掺杂电极当中的传导模型,同时GO掺杂还给透明导电薄膜的表面平整度、界面润湿性以及附着力等其他诸多性能带来了很大提升,并进行了机理上的分析探究,这些性能的提升十分有利于后期通过溶液法应用于光电子器件当中。将制备得到的GO/CNTs掺杂透明导电薄膜作为阳极制备基于Alq3的绿光有机发光二极管,重点讨论了掺杂电极光电特性、表面平整度以及界面润湿性给器件带来的性能提升以及机理解释,同时在空穴传输层采用PVK:TPD大分子与小分子结合的空穴传输层进行辅助,提高了空穴注入的传输的效率。
[Abstract]:With the increasing demand for flexible displays, touch screens, solar cells and portable energy storage electronics in our daily lives, The demand for flexible flexural transparent conductive thin film (TCFs) is also increasing. The conductive films of traditional luminescent devices are mostly indium tin oxide oxide (ITO) thin films, which are usually prepared by magnetron sputtering, and need high vacuum environment. At the same time, with the decreasing of indium content in rare metal, the cost of ITO film is increasing, and the flexibility of ITO film is poor. Due to its high electrical conductivity and excellent flexibility, the mechanical properties of CNTs are extremely high (about 1-2 TPa's Young's modulus, good stiffness). Excellent thermal conductivity. A certain amount of carbon nanotubes deposited on a transparent substrate can form a random network structure to form a low surface resistance. Transparent electrodes with high transmittance. However, due to the dimensional constraints of one-dimensional materials, the network structure formed by CNTs is loose and multiple overlapped structures, its structure is relatively unstable, so its adhesion on the substrate is poor. At the same time, the surface roughness of the electrode formed by one-dimensional lap structure is relatively high, which is not conducive to its application in optoelectronic devices such as OLED, while the graphene oxide (GOO), as a new two-dimensional carbon nano-material, has many excellent properties. The planar structure itself has a very high smoothness, which can effectively fill the defects of one-dimensional CNT network structure, and because of the large number of oxygen-containing functional groups on the surface, the wettability of the film surface can be greatly enhanced. It is beneficial to the fabrication of the device by further solution method, and can increase the surface work function of the original film at the same time. In this paper, graphene oxide / carbon nanotube doped transparent conductive films with excellent properties are prepared by spray method which is easier to produce in large scale. In this paper, the conduction model of carrier in doped electrode was established from the angle of doping with different concentrations and different diameters of go chip, and the surface smoothness of transparent conductive film was also obtained by go doping. Many other properties, such as interface wettability and adhesion, have been greatly improved, and the mechanism has been analyzed and explored. The improvement of these properties is very beneficial to the later application in optoelectronic devices by solution method. GO/CNTs doped transparent conductive thin films are used as anode to fabricate green light emitting diodes (Alq3) based on green light emitting diodes (OLEDs). The optical and electrical properties of the doped electrode, the surface smoothness and the wettability of the interface are discussed in detail. At the same time, the hole transport layer of PVK:TPD macromolecule and small molecule is used to assist in the hole transport layer. The transmission efficiency of hole injection is improved.
【学位授予单位】：天津工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O613.71;TN383.1

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