纵波光学声子耦合下半导体量子阱电磁诱导透明介质中的光孤子行为

发布时间：2018-03-22 03:25

本文选题：电磁诱导透明　切入点：半导体量子阱　出处：《湘潭大学》2016年硕士论文　论文类型：学位论文

【摘要】：目前正处于信息化时代,对信息的传输和处理的要求越来越高。光孤子作为信息载体比传统的信息载体有明显的优势。主要表现为:光孤子通讯有传输容量大,中继器大且误码率小,抗电磁干扰能力强,保密性能好等特点。因而如何在信息传输和处理过程中利用光孤子作为信息转播的载体,成为了目前物理与信息学科交叉研究的热门课题。电磁诱导透明(EIT)技术的应用和半导体工艺的不断完善,使得光孤子在通讯器件中的实现成为了可能。研究表明:EIT介质中的光孤子具有超慢群速度的特征,使得光孤子的存储成为可能。更为重要的是,半导体量子阱除了具备EIT介质所需的分立能级和大的电偶极矩等特点外,还相干演化可控和易于集成的优势被认为最具潜力实现EIT量子器件应用的介质。半导体量子阱EIT介质中光孤子不仅能利用光孤子在信息传输和处理上的优势,还能充分发挥半导体量子阱量子器件实际应用的潜能。因此,研究半导体量子阱EIT介质中的光孤子行为,能为信息传输和处理,量子器件实际应用提供一定的参考价值。本文的主要研究内容为第一章,先介绍了EIT的原理、特征和具体的现象;然后对半导体量子阱的构造、分类、具体制备方法进行阐述。最后,对本文的研究方法和内容作了简要的介绍。第二章,研究了纵波光学声子耦合弛豫效应对级联型三能级半导体量子阱EIT介质中光孤子行为的影响。结果表明,随着纵波光学声子耦合强度的增加,体系时间光孤子由暗孤子向亮孤子转化,即级联型半导体量子阱中暗-亮孤子的转化可通过纵波光学声子耦合强度大小来调控。此外,还发现光孤子的群速度也可通过纵波光学声子耦合强度和控制光来调控。第三章,研究了N型四能级非对称半导体量子阱EIT介质中纵波光学声子耦合效应和高阶效应对孤子动力学性质的影响。研究表明随着纵波光学声子耦合强度的增加,孤子的幅度出现先减小后增加的变化规律。当固定纵波光学声子耦合强度,发现随着三光子失谐量的增加,孤子的幅度和宽度都出现了最大值或(和)最小值。并且,这些极值点随纵波光学声子耦合强度的增加向三光子失谐量较小的方向移动。与此同时,随着纵波光学声子耦合强度的增加,孤子的群速度呈先增加后减小变化趋势。第四章,对现有的研究内容作了一个简要总结的同时并对半导体量子阱中的光孤子的后续研究工作进行了展望。
[Abstract]:At present, in the information age, the demand for information transmission and processing is higher and higher. Optical solitons as information carriers have obvious advantages over traditional information carriers. The main performance of optical soliton communication is that the transmission capacity of optical soliton communication is large. The repeater has the advantages of large bit error rate, strong anti-electromagnetic interference ability and good security performance. Therefore, how to use optical solitons as the carrier of information transmission and processing in the process of information transmission and processing, It has become a hot topic in the field of physics and information science. The application of electromagnetic induced transparency (EITT) technology and the continuous improvement of semiconductor technology. This makes possible the realization of optical solitons in communication devices. The study shows that the optical solitons in the W EIT medium have the characteristic of ultra-slow group velocity, which makes the storage of optical solitons possible. Semiconductor quantum wells have the characteristics of discrete energy level and large electric dipole moment, which are required by EIT medium. The advantages of controllable and easily integrated coherent evolution are considered to be the most promising media for the application of EIT quantum devices. In semiconductor quantum well EIT media, optical solitons can not only take advantage of the advantages of optical solitons in information transmission and processing. It can also give full play to the potential of practical application of semiconductor quantum well quantum devices. Therefore, the study of optical soliton behavior in semiconductor quantum well EIT media can be used for information transmission and processing. The main content of this paper is the first chapter, which introduces the principle, characteristics and specific phenomena of EIT, then the construction and classification of semiconductor quantum wells. Finally, the research methods and contents of this paper are briefly introduced. The effect of P-wave optical phonon coupling relaxation on the behavior of solitons in cascaded three-level semiconductor quantum wells (EIT) is studied. The results show that with the increase of P-wave optical phonon coupling strength, The system time solitons are transformed from dark solitons to bright solitons, that is, the conversion of dark to bright solitons in cascaded semiconductor quantum wells can be controlled by the coupling intensity of longitudinal wave optical phonons. It is also found that the group velocities of solitons can also be controlled by the coupling strength of P-wave optical phonons and the control light. The effects of P-wave optical phonon coupling effect and higher-order effect on the dynamic properties of soliton in N-type four-level asymmetric semiconductor quantum well (EIT) medium are studied. It is shown that the coupling intensity increases with the increase of P-wave optical phonon coupling strength. The amplitude of soliton decreases first and then increases. It is found that with the increase of three-photon detuning, the amplitude and width of soliton appear maximum or / or minimum when the coupling intensity of optical-phonon is fixed. These extreme points move along with the increase of the optical-phonon coupling intensity of the P-wave to the direction where the three-photon detuning is smaller. At the same time, the group velocity of the soliton increases first and then decreases with the increase of the coupling intensity of the optical-phonon in the P-wave. At the same time, a brief summary of the existing research contents is given, and the further research work on optical solitons in semiconductor quantum wells is also prospected.
【学位授予单位】：湘潭大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：O471.1;O437

【相似文献】