IGBT载流子增强技术发展概述

发布时间：2018-03-22 16:44

  本文选题：绝缘栅双极型晶体管(IGBT)　切入点：载流子　出处：《半导体技术》2016年10期 　论文类型：期刊论文

【摘要】：发射极载流子增强技术作为绝缘栅双极型晶体管(IGBT)器件所特有的技术手段,是进一步改善IGBT导通饱和压降和关断损耗折中性能的关键所在。在经历了20多年的发展之后,发射极载流子浓度增强的技术无论从结构和性能上都得到了巨大的提升。概述了IGBT载流子增强技术的发展过程,针对IGBT中的载流子分布,分析了载流子增强技术的物理机制,介绍了传统载流子增强技术所采用的器件结构及实现方法,包括注入增强型绝缘栅双极型晶体管(IEGT),载流子存储层结构的沟槽型双极型晶体管(CSTBT),高导电率IGBT(Hi GT),平面增强结构IGBT,以及最近几年较新型的介质阻挡层IGBT,局部窄台面IGBT,p型埋层CSTBT等。着重讨论了每种器件的结构特点以及性能上的改善。载流子增强技术将是新一代IGBT器件设计的一个主要技术手段。
[Abstract]:Emitter carrier enhancement technology, as a special technical means of insulated gate bipolar transistor (IGBT) devices, is the key to further improve the performance of IGBT on saturation voltage drop and turn-off loss. After more than 20 years of development, The technology of emitter carrier concentration enhancement has been greatly improved both in structure and performance. The development process of IGBT carrier enhancement technology is summarized, and the physical mechanism of carrier enhancement technology in IGBT is analyzed. This paper introduces the device structure and implementation method of traditional carrier enhancement technology. These include Injection-Enhanced Insulated Gate bipolar transistors (IEGTTs), trench bipolar transistors with carrier storage layer structures, high conductivity IGBT(Hi GTTs, plane enhanced bipolar transistors, and newer dielectric barrier layers, local narrow countertops, in recent years. The structure characteristics and performance improvement of each kind of device are discussed emphatically. Carrier enhancement technology will be one of the main technical means in the design of new generation IGBT devices.
【作者单位】： 江苏物联网研究发展中心;中国科学院中国科学院大学;中国科学院微电子研究所 硅器件技术重点实验室;
【基金】：国家重大科技专项资助项目(2013ZX02305-005-002) 国家自然科学基金资助项目(51490681) 省院合作高技术产业化专项资金项目(2016SYHZ0026)
【分类号】：TN322.8
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本文编号：1649508