大容量IGBT模块应用工况复现平台的设计与研究
本文选题:IGBT开关特性 切入点:工况复现 出处:《浙江大学》2017年硕士论文 论文类型:学位论文
【摘要】:大容量绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)在风力发电、柔性直流输电等大功率变流系统中得到极为广泛应用,提高大容量IGBT应用过程中的可靠性是提高整个变流系统可靠性的最重要途径之一,其中大容量IGBT的动态特性与实际正常运行工况联系最为紧密。目前国内外对于大容量IGBT的研究主要基于离线式的测试方法,较少涉及准在线或在线研究,因此亟需研制大容量IGBT动态特性准在线测试平台。利用测试平台进行器件选型及散热器设计等,有助于提前发现变流器的设计缺陷并提高变流器在实际应用中的可靠性。本论文根据大容量IGBT在线测试的需求,设计和搭建了基于H桥拓扑的兆瓦级应用工况复现测试平台,通过工况复现测试平台,可以模拟不同的实际运行工况(主要包括:外界环境温度,开关频率,负载频率,有功功率和无功功率),进行大容量IGBT的准在线测试,为大容量IGBT在实际运行工况中可靠运行提供理论基础。鉴于死区效应对于单相大功率变流器输出电能质量的影响,为使工况复现平台更准确的模拟实际的运行工况,进行了相应的死区补偿,从而减小负载电感的电流纹波以及其THD(Total Harmonic Distortion),使得负载电流与实际变流器电流谐波含量相近。IGBT结温是影响IGBT模块可靠性的重要因素,国内外学者提出了诸多基于热敏感电参数的结温提取方法,然而尚未涉及大容量IGBT模块动态结温在线监测和测试研究。本文以关断延迟时间为热敏感电参数,简要论述了其与器件结温和负载电流等运行工况的相关性,并通过实测构建了三维数据库。考虑到IGBT模块的功率损耗是影响其结温的重要因素之一,分析了一个负载周期内IGBT模块(IGBT和反并联二极管)的开关损耗和导通损耗的分布特征。并基于运行工况复现平台,研究了大容量IGBT模块在不同负载频率和不同负载电流相位时被测IGBT的功率损耗和结温波动规律,并通过与模块内置的负温度系数(Negative Temperature Coefficient,NTC)热敏电阻进行结温波动对比,验证了以关断延迟时间进行IGBT模块结温在线提取和检测具有灵敏度高、响应速度快和易于集成的优点。揭示了负载频率、电流相位对IGBT最大结温的影响程度。验证了基于关断延迟时间参数法对IGBT结温在线提取的可行性。
[Abstract]:Large capacity insulated gate bipolar transistor (IGBT) has been widely used in wind power generation, flexible direct current transmission and other high-power converter systems. Improving the reliability of large capacity IGBT is one of the most important ways to improve the reliability of the whole converter system. The dynamic characteristics of large capacity IGBT are most closely related to the actual normal operating conditions. At present, the research on large capacity IGBT is mainly based on off-line testing methods, and less on quasi online or online research. Therefore, it is urgent to develop a quasi on-line testing platform for large capacity IGBT dynamic characteristics, which can be used for device selection and radiator design, etc. It is helpful to discover the design defect of converter in advance and improve the reliability of converter in practical application. According to the requirement of large capacity IGBT online testing, this paper designs and builds a megawatt test platform based on H-bridge topology. Through the test platform, we can simulate different actual operating conditions (including external environment temperature, switching frequency, load frequency, active power and reactive power), and carry out quasi online test of large capacity IGBT. In view of the influence of dead-time effect on the output power quality of single-phase high-power converter, in order to make the reappearance platform more accurately simulate the actual operating conditions, this paper provides a theoretical basis for the reliable operation of large-capacity IGBT in actual operating conditions. The dead-time compensation is carried out to reduce the current ripple of the load inductor and its THD(Total Harmonic distortion, which makes the harmonic content of the load current and the actual converter current similar. The IGBT junction temperature is an important factor affecting the reliability of the IGBT module. Many methods for extracting junction temperature based on thermal sensitive electrical parameters have been proposed by domestic and foreign scholars. However, no research has been done on on-line monitoring and testing of dynamic junction temperature in large capacity IGBT modules. In this paper, the turn-off delay time is taken as the thermally sensitive electrical parameter. This paper briefly discusses the correlation between the device junction and the load current and other operating conditions, and constructs a 3D database through the actual measurement. Considering that the power loss of the IGBT module is one of the important factors affecting the junction temperature, The distribution characteristics of switching loss and on-loss of a IGBT module and anti-parallel diode during a load cycle are analyzed. In this paper, the power loss and junction temperature fluctuation of large capacity IGBT module under different load frequency and load current phase are studied, and the junction temperature fluctuation is compared with the negative Temperature coefficient (NTC) thermistor built in the module. It is verified that on-line detection and detection of junction temperature of IGBT module with turn-off delay time has the advantages of high sensitivity, fast response speed and easy integration. The load frequency is revealed. The effect of current phase on the maximum junction temperature of IGBT is verified. The feasibility of on-line extraction of IGBT junction temperature based on turn-off delay time parameter method is verified.
【学位授予单位】:浙江大学
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TN322.8
【相似文献】
相关期刊论文 前10条
1 费跃农,吴志强;逆变电源开关损耗的分析与对策[J];南昌大学学报(工程技术版);1996年02期
2 M.Baβler;A.Ciliox;P.Kanschat;;开关损耗与软度的平衡:改善软度是否需要不同型号的芯片?[J];变频器世界;2010年08期
3 张桂斌,徐政;最小开关损耗VSVPWM技术的研究与仿真[J];电工技术学报;2001年02期
4 黄海;李白雅;李强;尹进田;;基于最小开关损耗的SVPWM调制技术[J];自动化与仪表;2007年01期
5 马丽梅;关宇;吴元亮;丁伟;;基于最小开关损耗SVPWM技术的仿真研究[J];微计算机信息;2010年28期
6 毛兴武 ,许海东;新型低开关损耗QFET功率MOSFET及应用[J];世界电子元器件;2000年12期
7 刘松;;理解功率MOSFET的开关损耗[J];今日电子;2009年10期
8 ;Vishay推出新款超快二极管,优化系统开关损耗[J];电子设计工程;2013年12期
9 阎治安;唐明;易萍虎;;电机控制中电压空间矢量脉宽调制算法的探究[J];西安交通大学学报;2006年12期
10 赵佶;;瑞萨第七代650V和1250V IGBT建立新技术标准[J];半导体信息;2012年04期
相关会议论文 前1条
1 陈权;郑常宝;;用于计算变换器开关损耗的开关模型构建[A];安徽节能减排博士科技论坛论文集[C];2007年
相关硕士学位论文 前10条
1 乔亮;有源电力滤波器延时和开关损耗问题的研究[D];东北大学;2013年
2 邵伟恒;基于虚拟阻抗控制策略的有源电力滤波器的研究[D];东北大学;2014年
3 许芬;SiC二极管的非线性行为及其开关损耗研究[D];湘潭大学;2016年
4 祝冲冲;大容量IGBT模块应用工况复现平台的设计与研究[D];浙江大学;2017年
5 江剑;电力电子器件开关损耗测试与建模系统的研制、优化与验证[D];浙江大学;2006年
6 胥鹏程;应用于1-MHzBoostPFC变换器的电流源驱动电路[D];南京航空航天大学;2012年
7 石磊;基于DSP的PWM加相移控制的双向DC/DC变换器[D];浙江大学;2006年
8 余娟;功率MOSFET应用研究及主电路设计[D];西安理工大学;2005年
9 王蓓蓓;电力电子开关换向过程能量吸收回馈方法研究[D];北京交通大学;2015年
10 邢文彦;高频高压大功率电除尘电源优化设计[D];燕山大学;2015年
,本文编号:1652351
本文链接:https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/1652351.html