Zn掺杂InSb薄膜的电特性

发布时间：2018-03-24 09:00

  本文选题：InSb薄膜　切入点：Zn掺杂　出处：《稀有金属》2017年09期

【摘要】：研究了Zn掺杂InSb蒸镀薄膜杂质浓度和热处理条件对其电性能的影响。InSb薄膜采用三温度法在云母基片上制备,利用蒸镀Zn扩散后进行区熔再结晶的方法掺杂Zn杂质。在进行区熔再结晶时为了防止InSb分解和Sb的蒸发,用磁控溅射方法在InSb薄膜上生长厚度为300 nm的Si O2。测试结果表明最好的热处理条件为Ar气氛温度200℃、熔融区的移动速度1×10-5m·s~(-1)和熔融区通过数3。Zn成为受主,室温下测量Zn掺杂浓度为1.47×1022m-3的InSb薄膜的电子迁移率为5.65 m2·V-1·s~(-1)。Zn的掺杂浓度大于1.47×1022m-3时电子迁移率急剧减少,最大的霍尔常数为385 cm3·C-1。在1.5 T磁场下Zn掺杂浓度为3.16×1022m-3时,InSb薄膜电阻率的相对变化达到最大值为3.63,是未掺杂薄膜的2.46倍。
[Abstract]:The effects of impurity concentration and heat treatment conditions on the electrical properties of Zn doped InSb evaporated thin films were studied. InSb thin films were prepared on mica substrates by three temperature method. In order to prevent the decomposition of InSb and the evaporation of SB, Zn impurity is doped in the method of zone melting and recrystallization by using the method of evaporating Zn after diffusion of Zn, in order to prevent the decomposition of InSb and the evaporation of SB. Sio _ 2 with thickness of 300nm was grown on InSb thin films by magnetron sputtering. The results show that the best heat treatment conditions are ar atmosphere temperature 200 鈩，

本文编号：1657596