砷化镓表面化学约束刻蚀的有限元仿真及实验研究

发布时间：2018-03-26 19:12

本文选题：砷化镓　切入点：约束刻蚀剂层技术　出处：《哈尔滨工业大学》2015年硕士论文

【摘要】：砷化镓(GaAs)作为一种III-V族半导体材料,具有十分广泛的应用。在利用砷化镓晶片制造各种器件的过程中,常用的微纳加工方法通常无法同时满足加工分辨率高、加工效率高、批量生产三方面的要求。约束刻蚀剂层技术作为一种新型电化学微纳加工方法,可很好的满足上述要求,具有很大的发展潜力。本文基于有限元方法对约束刻蚀剂层技术进行了详细的研究。首先阐述了静态约束刻蚀仿真模型设置以及关键参数确定的理论依据,在此基础上建立了三维静态约束刻蚀有限元仿真模型,并采用建立的仿真模型进行了仿真计算,研究了电极形状尺寸以及工作距离对于溶液内物质浓度分布的影响规律;建立了三维动态约束刻蚀有限元仿真模型,研究了电极形状尺寸、工作距离以及强制对流对于溶液内刻蚀剂浓度分布的影响规律。研究了三维静态约束刻蚀工件表面加工轮廓的计算方法,通过与文献中得到的仿真和实验结果进行对比,初步验证了计算方法的准确性。并对静态约束刻蚀过程进行了仿真及分析,研究了溶液浓度配比、工作距离、电极形状尺寸及加工时间对于溶液内物质浓度分布及工件表面加工轮廓的影响规律。研究了三维动态约束刻蚀工件表面加工轮廓的计算方法,并对动态约束刻蚀过程进行了仿真分析,研究了溶液浓度配比、工作距离、电极形状尺寸、平动速度、旋转角速度、旋转半径以及加工时间对于溶液内刻蚀剂浓度分布及工件表面刻蚀轮廓的影响规律。另外,对平整加工过程中的部分工艺参数进行了仿真分析,研究了溶液浓度、工作距离以及横向进给量的选取方法。对约束刻蚀微纳加工平台进行了设计及搭建,进行了约束刻蚀实验及刻蚀结果的分析。结果表面:所搭建的加工仪器可以实现对于砷化镓工件的静态、动态约束刻蚀;通过刻蚀结果与仿真结果的定性对比验证了仿真结果的正确性。
[Abstract]:Gallium arsenide (GaAs) as a III-V semiconductor material, which is widely used in the manufacturing process of various devices. Using a GaAs wafer, commonly used micromachining methods usually cannot satisfy the processing of high resolution, high processing efficiency, batch production of three requirements. Confined etchant layer as a new electrochemical technology micro machining method, can well meet the above requirements, it has great development potential. This paper based on the finite element method is studied in detail on the Celt. First described the theoretical basis to determine the static constraint set etching simulation model and key parameters, based on the established three-dimensional finite element static constraint etching the simulation model, and simulated using the established simulation model, the influence of electrode shape size and working distance for the solution of thick material Influence of cloth; to establish the three-dimensional finite element dynamic constraint etching simulation model, the influence of electrode shape size, working distance and forced convection for solution in the etchant concentration distribution. The influence of the study of 3D static constraints etching workpiece surface contour calculation method, by comparing with the simulation and experimental results obtained in the literature the results validated the accuracy of the calculation method and the static constraints. The etching process is simulated and analyzed, the solution concentration, working distance, influence of electrode shape size and processing time for solution concentration distribution and workpiece material surface processing contour. Calculation method of 3D dynamic constraint etching surface processing the outline, and the dynamic constraint etching process was simulated and analyzed, studied the concentration ratio, working distance, electrode shape and size, Translational velocity, angular velocity, rotation radius and processing time for influence of solution concentration and etching agent etching on the surface of the workpiece contour. In addition, some parameters in the process of formation are analyzed, studied the solution concentration, separation and selection method of horizontal feed distance constraint on etching work. Nano processing platform is designed and built, analyzed and experimental constraints etching etching results. Results: the processing surface construction of the apparatus can realize static for GaAs workpiece, dynamic constraint by etching etching; qualitative comparison results and simulation results verify the correctness of simulation results.

【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.7

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