半导体QCL的理论研究与有源区结构设计

发布时间：2018-03-29 02:15

本文选题：半导体QCL　切入点：有源区　出处：《哈尔滨师范大学》2015年硕士论文

【摘要】：当前半导体QCL的输出波长已从中红外增加至太赫兹波段,在各科学领域存在着重要的应用前景。论文主要从理论上对半导体QCL有源区结构设计、输出特性及性能评价进行了全面而深入的研究,设计了以InGaAs/InAlAs以及GaAs/AlGaAsAl材料体系的“斜跃迁”与“垂直跃迁”两种模式的半导体QCL有源区结构,分析并比较了其结构参数与输出特性。本论文的研究成果对优化半导体QCL的输出性能提供了丰富的理论依据,具体地:1.通过MATLAB软件采用时域有限差分法和传递矩阵法求解了一维有效质量薛定谔方程,并得到有源区各能级与波函数分布。对已有半导体QCL的有源区进行了模拟计算,验证了该方法的有效性。2.构建了半导体QCL的性能评价体系,如偶极矩阵元、散射时间、阈值增益、阈值电流密度、外微分量子效率及工作温度等,完善了半导体QCL的设计理论。3.研究表明设计的新型半导体QCL有源区结构的输出特性优于同类型半导体QCL,且“垂直跃迁”模式优于“斜跃迁”模式。基于In0.53Ga0.47As/In0.52Al0.48As材料体系的“垂直跃迁”模式室温下输出功率约为140mW。
[Abstract]:At present, the output wavelength of semiconductor QCL has been increased from mid-infrared to terahertz band, which has an important application prospect in various fields of science. In this paper, the structure of semiconductor QCL active region is designed theoretically. The output characteristics and performance evaluation have been studied thoroughly and thoroughly. The active region structure of semiconductor QCL with two modes of "oblique transition" and "vertical transition" of InGaAs/InAlAs and GaAs/AlGaAsAl material system has been designed. The structural parameters and output characteristics are analyzed and compared. The research results in this paper provide a rich theoretical basis for optimizing the output performance of semiconductor QCL. By using MATLAB software, the one-dimensional effective mass Schrodinger equation is solved by using the finite difference time-domain method and the transfer matrix method, and the distribution of energy levels and wave functions in the active region is obtained. The active region of the semiconductor QCL is simulated and calculated. The effectiveness of this method is verified. 2. The performance evaluation system of semiconductor QCL is constructed, such as dipole moment element, scattering time, threshold gain, threshold current density, external differential quantum efficiency and working temperature, etc. The design theory of semiconductor QCL is improved. 3. The study shows that the output characteristics of the novel semiconductor QCL active region structure are superior to those of the same type semiconductor QCLs, and the "vertical transition" mode is superior to the "oblique transition" mode. The output power of "vertical transition" mode is about 140 MW at room temperature.
【学位授予单位】：哈尔滨师范大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN301

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