Ka波段GaN HEMT单片集成单刀双掷开关的设计

发布时间：2018-04-03 02:20

本文选题：Ka波段　切入点：氮化镓高电子迁移率晶体管　出处：《北京理工大学》2016年硕士论文

【摘要】：氮化镓(GaN)宽禁带半导体作为第三代半导体材料,具有高热导率、高击穿电压、高电子漂移率、耐高温、耐高压等优势,特别适合应用在毫米波数字雷达系统中。T/R组件是雷达系统的核心部件,其性能的优劣直接影响雷达系统的发展,基于实验室项目中已经设计出的基于GaN HEMT单片微波集成功率放大器,为了设计出单片微波集成T/R组件,本论文拟讨论基于GaN HEMT单片微波单刀双掷开关的研究及设计。主要研究内容如下。本论文首先分析了设计所采用的有源器件GaN HEMT的物理结构及其工作原理;分析了单片微波集成电路设计中常用的微带线、电阻、电容等无源器件,利用HFSS进行建模与仿真,分析得到无源器件的物理尺寸与器件取值、品质因数Q的关系。在以上研究的基础上,完成了Ka波段GaN HEMT单片微波集成单刀双掷开关的设计。主要通过ADS软件进行了开关拓扑结构的设计,设计采用了并联对称结构提高了开关的隔离度,采用了并联谐振电感降低了插入损耗,采用了阻抗匹配拓展了带宽。其次进行了版图拓扑结构的设计。最后,进行了版图优化、仿真和电磁场联合仿真。经过仿真优化,结果显示在30GHz~40GHz工作频带内,开关的插入损耗小于2dB,隔离度大于25dB,功率容量为7.94W,开关速度小于1ns,回波损耗大于22dB。
[Abstract]:As the third generation semiconductor material, gallium nitride (gan) wide band gap semiconductor has the advantages of high thermal conductivity, high breakdown voltage, high electron drift rate, high temperature resistance, high pressure resistance and so on.Especially suitable for application in millimeter-wave digital radar system. T / R module is the core component of radar system, and its performance directly affects the development of radar system.Based on the monolithic microwave integrated power amplifier based on GaN HEMT which has been designed in the laboratory project, in order to design the monolithic microwave integrated T / R module, this paper discusses the research and design of single-chip microwave single-pole double-throw switch based on GaN HEMT.The main research contents are as follows.In this paper, the physical structure and working principle of the active device GaN HEMT are analyzed, and the passive devices such as microstrip line, resistance, capacitance and so on in the design of monolithic microwave integrated circuit are analyzed, and the modeling and simulation are carried out by HFSS.The relationship between physical size of passive device and device value, quality factor Q is obtained.Based on the above research, the design of Ka-band GaN HEMT monolithic microwave integrated SPDT switch is completed.The topology of the switch is designed by ADS software. The parallel symmetrical structure is used to improve the isolation of the switch, the parallel resonant inductor is used to reduce the insertion loss, and the impedance matching is used to expand the bandwidth.Secondly, the layout topology is designed.Finally, layout optimization, simulation and electromagnetic field simulation are carried out.The simulation results show that the insertion loss of the switch is less than 2 dB, the isolation is more than 25 dB, the power capacity is 7.94 W, the switching speed is less than 1ns, and the echo loss is more than 22 dB in the operating band of 30GHz~40GHz.
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386

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