LiMgZnO薄膜晶体管的研制

发布时间：2018-04-05 16:05

  本文选题：锂镁锌氧化物　切入点：薄膜晶体管　出处：《北京交通大学》2015年硕士论文

【摘要】：透明薄膜晶体管(TFT)是广泛应用在平板显示和透明电路等领域的电子器件。随着大尺寸液晶显示器和有源有机发光二极管的发展,硅基TFT已经不能很好的满足其在工业上的应用,主要原因是硅基TFT有着迁移率太低(1cm2/V s)、对可见光敏感等缺点。金属氧化物TFT,尤其是ZnO基TFT以其迁移率高、开口率低等优点成为了硅基TFT的理想替代品。但是,金属氧化物TFT也存在一些问题,如性能不稳定,迁移率还不足够高等缺点,这些缺点限制了金属氧化物TFT的进一步发展。针对金属氧化物TFT迁移率还不足够高等问题,我们研制了LiMgZnO-TFT,主要研究工作如下： 一、研究了退火温度对LiMgZnO-TFT性能的影响,发现退火温度800℃时,器件性能最佳,迁移率为3.03cm2/V s,阈值电压为17V,开关比为4.1E+06; 二、研究了沟道长度对LiMgZnO-TFT性能的影响,发现沟道长度最小为50um时,器件性能最佳,迁移率为9.85cm2/V s,阈值电压7V,开关比为5E+06； 三、研究了有源层厚度对LiMgZnO-TFT性能的影响,测得有源层厚度为35nm时,器件性能最佳,迁移率为10.83cm2/Vs,阈值电压为-18V,开关比为9.49E+06； 四、研究了器件制备过程中氧气流量对LiMgZnO-TFT性能的影响,发现氧气流量为3SCCM时,器件性能最佳,迁移率为12.8cm2/V s,阈值电压为-15V,开关比为2.41E+07。
[Abstract]:Transparent thin film transistor (TFT) is an electronic device widely used in flat panel display and transparent circuit.With the development of large size liquid crystal display (LCD) and active organic light-emitting diodes (ALEDs), silicon-based TFT can not satisfy its industrial application. The main reason is that silicon-based TFT has many disadvantages, such as low mobility of 1 cm ~ 2 / V / s, sensitivity to visible light and so on.Metal oxide (TFT), especially ZnO based TFT, is an ideal substitute for silicon-based TFT because of its high mobility and low opening rate.However, there are some problems in metal oxide TFT, such as unstable performance, low mobility and so on, which limit the further development of metal oxide TFT.To solve the problem that the mobility of metal oxide TFT is not high enough, we have developed LiMgZnO-TFT.The main research work is as follows:Firstly, the effect of annealing temperature on the properties of LiMgZnO-TFT is studied. It is found that the annealing temperature at 800 鈩，

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