超薄埋氧层FDSOI器件制备及其性能测试

发布时间：2018-04-05 16:32

本文选题：全耗尽绝缘体上硅(FDSOI)　切入点：超薄埋氧层(UTB)　出处：《微纳电子技术》2016年09期

【摘要】：全耗尽绝缘体上硅(FDSOI)器件具有出色的短沟道效应(SCE)控制能力等优势,是22 nm及以下的CMOS技术节点中的有力竞争者。为了研究减薄埋氧层(BOX)厚度对FDSOI器件性能和短沟道效应的影响,并进一步提高FDSOI器件的短沟道效应控制能力,制备了超薄BOX(UTB)FDSOI器件,并同时制备除BOX厚度外其余条件完全相同的145 nm厚BOX FDSOI对比器件。对制备的器件进行了电学性能测试,展示了两种器件的传输特性和转移特性曲线,并且对器件施加背栅偏压以研究其对器件性能的调制作用。测试结果显示,UTB FDSOI器件的关断电流I_(off)与145 nm厚BOX FDSOI器件相比降低了近50%,DIBL性能也得到了显著提升。此外,施加背栅偏压不仅可以更灵敏地调制FDSOI器件性能,而且可以有效地优化器件的短沟道效应。
[Abstract]:Fully depleted insulator devices with excellent short channel effect (SCE) control capability are powerful competitors in CMOS technology nodes up to 22 nm.In order to study the effect of the thickness of buried oxygen layer (box) on the performance and short channel effect of FDSOI devices, and to improve the control ability of short channel effects of FDSOI devices, ultra-thin BOX(UTB)FDSOI devices were fabricated.At the same time, 145nm thick BOX FDSOI contrast devices with the same conditions except BOX thickness were fabricated.The electrical properties of the fabricated devices are tested, the transmission characteristics and transfer characteristic curves of the two devices are shown, and the back gate bias voltage is applied to the device to study its modulation effect on the device performance.The test results show that the turn-off current of the UTB FDSOI device is much lower than that of the 145nm thick BOX FDSOI device.In addition, the application of backgate bias can not only modulate the performance of FDSOI devices more sensitively, but also optimize the short channel effect of the devices effectively.
【作者单位】：中国科学院微电子研究所微电子器件与集成技术重点实验室;
【分类号】：TN386

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