基于SM-JTE结构的4H-SiC器件

发布时间：2018-04-09 07:03

  本文选题：SM-JTE　切入点：H-Si　出处：《微电子学》2017年04期

【摘要】：介绍了高压空间调制结终端扩展(SM-JTE)结构及其优势。结合实际的MOSFET工艺和已有的理论模型,定义了全新的4H-Si C器件TCAD仿真模型参数。首次提出了确定SM-JTE最优长度的方法。基于SM-JTE结构的4H-Si C器件具有优良的击穿特性。SM-JTE结构的长度为230μm时,SM-JTE的击穿电压可以达到16 k V。针对界面电荷对击穿特性的影响进行了系统仿真研究。仿真结果表明,正界面电荷相比负界面电荷对击穿电压的影响更大,且界面态电荷会引起击穿电压明显下降。该SM-JTE结构可以采用更短的结终端,在同样尺寸的芯片上能制作更多的器件,从而提高生产效率,降低器件成本。
[Abstract]:This paper introduces the structure and advantages of SM-JTE (high voltage spatial modulation junction terminal).Combined with the actual MOSFET process and the existing theoretical model, a new TCAD simulation model parameter of 4H-Si C device is defined.A method for determining the optimal length of SM-JTE is proposed for the first time.The breakdown voltage of SM-JTE based on SM-JTE structure is 16 kV when the length of SM-JTE is 230 渭 m.The influence of interface charge on breakdown characteristics is studied by simulation.The simulation results show that the positive interface charge has more influence on the breakdown voltage than the negative interface charge, and the interface state charge will cause the breakdown voltage to decrease obviously.The SM-JTE structure can use shorter junction terminals, and can make more devices on the same size chip, thus improving the production efficiency and reducing the device cost.
【作者单位】： 南京电子器件研究所宽禁带功率半导体器件国家重点实验室;
【分类号】：TN386
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本文编号：1725351