电子传输层厚度及阻塞层对量子点发光二极管性能的影响

发布时间：2018-04-09 12:17

本文选题：量子点发光二极管　切入点：厚度　出处：《发光学报》2017年01期

【摘要】：针对量子点发光二极管(QLED)中载流子注入不平衡的问题,对空穴和电子在量子点层的注入速率进行了研究。制备了不同电子传输层厚度、结构为ITO/PEDOT∶PSS/Poly-TPD/QDs/Alq3/Al的QLED样品。Alq_3厚度由25 nm逐步递增至45 nm时,器件的开启电压升高,器件均发出量子点的红光。当Alq_3厚度为30nm时,器件的电流效率最高。此时,空穴和电子在量子点层的注入速率达到相对平衡。为进一步研究器件的发光特性,在QDs和Alq_3接触界面嵌入电子阻塞层TPD。研究发现,当TPD的厚度为1 nm时,器件发出红光;当TPD厚度为3 nm和5 nm时,器件开始出现绿光。实验结果表明,在选取电子阻塞层时,应选择LUMO较低的材料且阻塞层的厚度必须很薄。
[Abstract]:In order to solve the problem of carrier injection imbalance in quantum dot light-emitting diode (QLED), the injection rate of holes and electrons in quantum dot layer is studied.Different thickness of electron transport layer was prepared. When the thickness of QLED 路AlqS3 with ITO/PEDOT:PSS/Poly-TPD/QDs/Alq3/Al structure increased from 25 nm to 45 nm, the opening voltage of the device increased and the red light of quantum dots was emitted.When the thickness of Alq_3 is 30nm, the current efficiency of the device is the highest.At this point, the injection rate of holes and electrons in the quantum dot layer reaches a relative equilibrium.In order to further study the luminescence characteristics of the device, the electronic blocking layer is embedded in the contact interface of QDs and Alq_3.It is found that when the thickness of TPD is 1 nm, the device emits red light, and when the thickness of TPD is 3 nm and 5 nm, the green light begins to appear.The experimental results show that when the electron blocking layer is selected, the material with lower LUMO should be selected and the thickness of the barrier layer must be very thin.
【作者单位】：北京交通大学电子信息工程学院;北京信息科技大学自动化学院;
【基金】：国家重点基础研究发展计划(973)(2015CB654605)资助项目~~
【分类号】：TN312.8

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