一种结构简单的新型CMOS欠压保护电路

发布时间：2018-04-09 17:33

本文选题：欠压保护　切入点：独立　出处：《电子器件》2017年03期

【摘要】：分析了两种传统欠压保护电路的工作原理及优缺点,在此基础上提出一种新颖的欠压保护电路。电路采用电流比较的方式,不依赖比较器、基准电源等辅助结构,结构简单,具有良好的独立性和稳定性;此外,有源器件中仅使用了MOS管,工艺实现容易,更便于集成。仿真结果表明,当电源电压在2.5 V~3.0 V之间变化时,电路欠压保护功能正常,并具有90 m V的迟滞,可有效防止电源电压波动引起的误触发。
[Abstract]:The working principle, advantages and disadvantages of two traditional under-voltage protection circuits are analyzed, and a novel under-voltage protection circuit is proposed.The circuit adopts the way of current comparison, independent of comparator, reference power supply and other auxiliary structures. It has simple structure, good independence and stability. In addition, only MOS transistor is used in the active device, so the process is easy to realize and the integration is more convenient.The simulation results show that when the power supply voltage varies between 2.5 V and 3.0 V, the circuit undervoltage protection function is normal and has a hysteresis of 90 MV, which can effectively prevent the false trigger caused by the voltage fluctuation of the power supply.
【作者单位】：西南交通大学信息科学与技术学院微电子研究所;
【基金】：国家自然科学基金项目(61531016,61271090) 四川省科技支撑计划项目(2016GZ0059,2015GZ0103)
【分类号】：TN432

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