MMVCX光伏型HgCdTe中波探测器暗电流温度特性

发布时间：2018-04-12 17:43

本文选题：HgCdTe + 光伏探测器　；参考：《红外与毫米波学报》2017年03期

【摘要】：研究了光伏型HgCdTe中波探测器的暗电流与烘烤时间的关系特性.编写了一种适用于n-on-p型的中波HgCdTe红外探测器的解析拟合程序.结合暗电流的主导机制有扩散机制、产生复合机制、带间直接隧穿机制和陷阱辅助隧穿机制.通过对样品不同烘烤时间的R-V曲线的解析拟合,得到了它们的暗电流成分,提取了6个特征参数.通过对比不同烘烤时间特征参数的变化,分析了烘烤对器件的影响.
[Abstract]:The relationship between dark current and baking time of photovoltaic HgCdTe detector is studied.An analytical fitting program for medium wave HgCdTe infrared detector suitable for n-on-p type is developed.The dominant mechanism of combining dark current is diffusion mechanism, compound mechanism, inter band direct tunneling mechanism and trap assisted tunneling mechanism.By analyzing the R-V curves of the samples at different baking times, the dark current components were obtained and six characteristic parameters were extracted.By comparing the characteristic parameters of different baking time, the influence of baking on the device is analyzed.
【作者单位】：安徽大学物理与材料科学学院;中国科学院上海技术物理研究所红外物理国家重点实验室;
【基金】：国家自然科学基金(11374013,51672001)~~
【分类号】：TN215

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