GaAs基双势垒超晶格量子阱RTD器件研究

发布时间：2018-04-12 17:44

本文选题：共振隧穿二极管 + GaAs/AlGa　；参考：《杭州电子科技大学》2015年硕士论文

【摘要】：RTD(Resonant Tunneling Diode)是一种具有微分负阻效应的纳米器件,具有负阻、双稳自锁、高频高速、低压低功耗等特性。目前关于RTD在集成电路领域应用已投入了大量的研究,并已经取得了一些应用成果。随着MBE(分子束外延)、MOCVD(金属有机物化学气相淀积)等精密生长技术的发展,RTD已经成为了率先投入生产的纳米量子器件之一。但由于国内对RTD理论和应用的研究还比较欠缺,工艺上原子级精度的集成外延控制技术还有待改善,使得制造出的RTD性能不是很理想。本文以GaAs基RTD为研究对象,首先概述了RTD的国内外研究现状,比较详细的探讨了其电流传输机理,并建立了GaAs基器件结构和物理机理的电学特性数学模型;在此基础上初步设计了比较合理的GaAs基RTD器件结构;使用SILVACO公司的器件仿真软件Atlas对此结构进行了器件的电学特性仿真,研究透射系数与外加偏压以及材料结构参数之间的关系,NDR(微分负阻特性)随材料结构参数(主要包括势垒宽度、势阱宽度以及集电极和发射极掺杂浓度等)以及势垒高度等的变化规律。通过理论计算和仿真优化,初步总结了对称DBS(双势垒单势阱)RTD中适合低压低功耗的多值逻辑电路应用的比较的合理的材料结构参数。为了降低RTD的峰、谷值电压和非共振隧穿电流,更好的应用于多值逻辑电路中,本文提出了一种改进方法,主要是采用非对称双势垒RTD结构,通过改变非对称RTD势垒高度和势垒宽度,在反向偏压下实现提高透射系数,进一步降低峰值电压和非共振隧穿电流。并最终提出采用GaAs/AlGa As基双势垒RTD实现多值逻辑电路设计所需的材料参数。
[Abstract]:RTD(Resonant Tunneling Diode is a kind of nano-device with differential negative resistance effect. It has the characteristics of negative resistance, bistable self-locking, high frequency and high speed, low power consumption and so on.At present, a lot of researches have been devoted to the application of RTD in the field of integrated circuits, and some application results have been obtained.With the development of MBE (Molecular Beam Epitaxy (MBE) MOCVD (Metal Organic Chemical Vapor deposition) and other precise growth techniques, RTD has become one of the first nanoscale quantum devices in production.However, due to the lack of domestic research on the theory and application of RTD, the integrated epitaxial control technology of atom-level precision still needs to be improved, which makes the RTD performance not ideal.In this paper, GaAs based RTD is taken as the research object. Firstly, the research status of RTD at home and abroad is summarized, the mechanism of current transmission is discussed in detail, and the mathematical model of electrical characteristics of GaAs based device structure and physical mechanism is established.On this basis, a reasonable GaAs based RTD device structure is designed preliminarily, and the electrical characteristics of the structure are simulated by using the device simulation software Atlas of SILVACO Company.The relationship between transmission coefficient, applied bias voltage and structural parameters of materials is studied. NDR (differential negative resistance characteristic) depends on the structural parameters of materials (including the width of potential barrier).The variation of potential well width, collector and emitter doping concentration, and barrier height.Through theoretical calculation and simulation optimization, reasonable material structure parameters of symmetrical DBS (double barrier single well RTD) for low voltage and low power consumption multivalued logic circuits are preliminarily summarized.In order to reduce the peak and valley voltage and non-resonant tunneling current of RTD, and to be better applied in multi-valued logic circuits, an improved method is proposed in this paper, which mainly adopts asymmetric double-barrier RTD structure.By changing the height and width of asymmetric RTD barrier, the transmission coefficient can be increased under reverse bias voltage, and the peak voltage and non-resonant tunneling current can be further reduced.Finally, the material parameters needed for the design of multivalued logic circuits using GaAs/AlGa as base double barrier RTD are proposed.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1;TN304

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