基于MATLAB编程的HBT集成电路温度分析方法研究

发布时间：2018-04-12 20:57

本文选题：温度分布 + MATLAB编程　；参考：《西安电子科技大学》2015年硕士论文

【摘要】：现代通信技术的高速发展,使得异质结双极型晶体管(HBT)的应用日益广泛。在雷达、移动电话、光通信等领域都有HBT的广泛应用。相比传统Si CMOS器件,HBT器件的功率密度高、增益大、相位噪声小、线性度好,尤其是截止频率高,使其成为微波射频电路有源器件的重要选择。但与此同时,HBT器件功率大、电流密度大,使得器件正常工作时的温度较高,影响了HBT电路的可靠性。因此温度分布的研究对于HBT电路的设计来说非常重要。版图布局是集成电路设计的关键环节,给出器件和芯片的温度分布,从而在版图设计时充分考虑温度的影响,实现电磁热一体化分析,能够提高电路设计的正确性。本文首先总结了研究HBT电路分布的重要性和当今国内外集成电路温度分布的研究现状,然后分析了HBT器件的工作原理和自热效应原理,又介绍了相关的热传导数值模拟方法和有限元分析理论。接着介绍了本文中的工作:基于MATLAB编程,提出了一个分析HBT集成电路版图级温度分布的方法,其主要步骤如下:(1)根据厂商提供的工艺库信息,使用有限元软件Comsol,对芯片中使用的HBT晶体管进行几何建模,对几何模型施加热载荷和边界条件,再进行网格划分,最后进行热稳态求解,得到单器件的温度分布数据。将温度分布数据导入MATLAB软件中进行函数拟合;(2)使用电路仿真软件对设计的电路进行仿真,得到每个HBT晶体管的功耗数据,将其标注在电路版图的发射极中心位置,使用GDSII格式进行导出,使用LinkCAD软件进行编辑,保留发射极和功耗信息,将版图转换为DXF格式;(3)使用MATLAB软件进行编程,自动提取发射极坐标和功耗信息,计算各个HBT器件的中心点温度,并考虑多个器件耦合情况下对温度分布的精确求解,最后绘制温度分布图和等温线分布图。为了验证以上方法的有效性,本次工作中还用热成像仪对正常工作情况下的电路芯片进行了成像测试。测试结果与用本文方法得出的温度分布在整体趋势上较为一致。但仿真的结果在部分版图区域偏低,最后分析了仿真结果偏低的原因,并提出了根据仿真结果对版图进行修正的方法,还提出了本方法的一些有待提高之处。
[Abstract]:With the rapid development of modern communication technology, heterojunction bipolar transistor (HBT) is widely used.HBT is widely used in radar, mobile phone, optical communication and other fields.Compared with the conventional Si CMOS devices, the power density, gain, phase noise and linearity are higher, especially the cut-off frequency, which makes it an important choice of active devices in microwave RF circuits.But at the same time, the high power and high current density of the HBT device make the temperature of the device higher when it works normally, which affects the reliability of the HBT circuit.Therefore, the study of temperature distribution is very important for the design of HBT circuits.Layout is the key link in the integrated circuit design. The temperature distribution of the device and chip is given. In order to fully consider the influence of temperature in layout design, electromagnetic and thermal integration analysis can be realized, and the correctness of circuit design can be improved.In this paper, the importance of studying the distribution of HBT circuits and the current research status of temperature distribution of integrated circuits at home and abroad are summarized, and then the working principle and the principle of self-heating effect of HBT devices are analyzed.The numerical simulation method of heat conduction and the theory of finite element analysis are also introduced.Then the work of this paper is introduced: based on MATLAB programming, a method for analyzing the layout temperature distribution of HBT integrated circuits is proposed, the main steps of which are as follows: 1) according to the process database information provided by the manufacturer,The HBT transistors used in the chip are modeled by finite element software Comsol. the heating load and boundary conditions are applied to the geometry model, and then the meshes are divided. Finally, the thermal steady state is solved, and the temperature distribution data of the single device are obtained.The temperature distribution data is imported into MATLAB software for function fitting. The circuit simulation software is used to simulate the designed circuit. The power consumption data of each HBT transistor is obtained, and the position of emitter center of the circuit layout is marked.GDSII format is used for export, LinkCAD software is used for editing, emitter and power consumption information is retained, layout is converted to DXF format / 3) MATLAB software is used to program, automatic extraction of transmission polar coordinates and power consumption information,The center temperature of each HBT device is calculated, and the exact solution of the temperature distribution is considered in the case of multiple devices coupling. Finally, the temperature distribution diagram and the isotherm distribution diagram are drawn.In order to verify the effectiveness of the above method, the thermal imager is also used to test the circuit chip under normal working conditions.The test results are consistent with the temperature distribution obtained by the method in this paper.But the result of simulation is on the low side in some areas of layout. At last, the reason of low result of simulation is analyzed, and the method of modifying layout according to the result of simulation is put forward, and some improvements of this method are also put forward.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8;TN407;TP319

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