射频高效率功率放大器设计

发布时间：2018-04-13 03:26

本文选题：高效率 + E类放大器　；参考：《电子科技大学》2017年硕士论文

【摘要】：近年来,由于通信系统的发展,对发射机中功率放大器的各项指标要求越来越高,设计出高效率、小型化、低成本和宽带的功率放大器对通信系统有重要意义,其次随着第三代半导体技术的发展,也为设计出高功率高效率的放大器奠定了基础。本文主要研究设计高效率和宽带放大器,具体工作总结如下:本文先具体地介绍了功率放大器的各项指标和分类,以及功率放大器设计的一般流程。其中F类放大器作为谐波控制类放大器,相比其他高效率放大器有诸多优势且设计简便,因此先具体分析了F类功放的传统结构及其与实际设计的差异,进而对传统F类功放稍加改进,并基于此设计了一款2.14GHz的高效率F类放大器,通过ADS原理图仿真得出在输入功率28dBm时,PAE高达83%,输出功率40.1dBm,并经加工测试PAE最高为77.1%,漏级效率最高为81.9%。验证了改进设计的可行性。介绍传统的E类功率放大器传统结构,使用GaN晶体管设计了一款2.1GHz的高效率E类放大器,其中输出匹配网络在E类功放传统结构基础上增加了谐波控制电路,而输入匹配网络基于源牵引设计。测试结果显示在输入功率为26dBm时,PAE最大为76.28%,此时输出功率为38.8dBm。介绍了几种宽带匹配方法,其中的切比雪夫低通滤波器匹配法虽然计算较为繁琐,但是设计相对简单方便,因此使用切比雪夫低通滤波器匹配法设计了一款工作在0.7-2.3GHz宽带放大器,仿真结果显示当输入功率28dBm,漏级电压28V,栅极电压-2.7V时,在带宽0.8-2.3GHZ内PAE64%,输出功率大于40dBm。在功放的实际设计中,为了减小最后实测和仿真的差距,本文十分注重原理图仿真和版图仿真的结合,并在电磁联合仿真时考虑实际直流溃电线以及接地孔的影响,最大化地减小仿真结果与实际测试的误差,实际测试也证明这种方案的可行性。
[Abstract]:In recent years, due to the development of the communication system, the request of the transmitter power amplifier is more and more high, to design a high efficiency, miniaturization, low cost and broadband power amplifier is important for the communication system, then with the development of the third generation of semiconductor technology, but also laid the foundation for the design of high efficiency power amplifier this paper mainly studies design of high efficiency and wide band amplifier, the specific work are summarized as follows: This paper first introduces in detail the indicators and classification of power amplifier, power amplifier and the general design process. The class F amplifier as harmonic control amplifier, amplifier has many advantages compared to other high efficiency and simple design, so the first detailed analysis of the the traditional structure of class F power amplifier and the difference between actual design, then the traditional class F power amplifier is improved, and based on the design of a 2 .14GHz high efficiency class F amplifier, the input power of 28dBm through the ADS simulation principle diagram, PAE up to 83%, the output power of 40.1dBm, and processed by testing PAE up to 77.1%, the drain efficiency was up to 81.9%. to verify the feasibility of improving the design. The class E power amplifier on the traditional traditional structure, high efficiency a class E amplifier is used to design the 2.1GHz GaN transistor, the output matching network in the traditional class E power amplifier structure based on the increase of harmonic control circuit, and the input source design based on traction matching network. Test results show that when the input power is 26dBm, the maximum is 76.28% PAE, the output power of 38.8dBm. is introduced, and several methods broadband Chebyshev low-pass filter which, although the law is complicated in calculation, but the design is relatively simple and convenient, so the use of Chebyshev low-pass filter, a method of design Working in 0.7-2.3GHz broadband amplifier, the simulation results show that when the input power is 28dBm, the drain voltage 28V, gate voltage of -2.7V, PAE64% in 0.8-2.3GHZ bandwidth, the output power is more than 40dBm. in the actual design of the power amplifier, in order to reduce the gap between the measured and simulated at last, this paper emphasizes on combination principle diagram simulation and layout simulation, and consider the actual current collapse effect of ground wire and the hole in the joint simulation of electromagnetic, minimizing error simulation results and actual test, the actual test also proved the feasibility of this scheme.

【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.75

【参考文献】