一种采用斩波调制技术的高精度带隙基准源

发布时间：2018-04-16 01:04

  本文选题：斩波调制 + 失调电压　； 参考：《微电子学与计算机》2016年12期

【摘要】：采用TSMC 40nm CMOS工艺,设计了一种高精度的CMOS带隙基准源.首先分析带隙基准的误差,以及误差的消除手段,然后使用斩波技术和凹口滤波器(notch filter)消除失调电压,以及减少斩波带来的纹波影响.最后通过蒙塔卡洛仿真表明该基准源在使用斩波技术后3σ精度提高了7.7倍,达到0.54%.该基准源在-20~125℃的温度范围内温度系数为14×10-6/℃.
[Abstract]:Using TSMC 40nm CMOS process, a high precision CMOS bandgap reference source is designed.First, the error of bandgap reference and the method of error elimination are analyzed, then the offset voltage is eliminated by chopping technique and notch filter, and the ripple effect caused by chopper is reduced.Finally, the simulation results of Montagaro show that the 3 蟽 accuracy of the reference source is 7.7 times higher than that of the chopping technique, reaching 0.54.The temperature coefficient of the reference source is 14 脳 10 ~ (-6) / 鈩，

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