GaSb光阴极发射层MOCVD制备技术研究

发布时间：2018-04-16 02:25

  本文选题：GaSb + MOCVD　； 参考：《长春理工大学》2017年硕士论文

【摘要】：本文通过对微光夜视光阴极理论及其参数表征的分析和研究,选取与GaAs同处于III-V族的GaSb材料作为研究对象,利用MOCVD技术将其制备成未被激活的反射式光阴极发射层薄膜结构。制备过程中选取反应温度T、MO源气相V/III为参数变量,结合XRD及SEM等测试手段研究生长过程中不同工艺参数对GaSb发射层外延质量的影响,并找到GaSb发射层薄膜外延生长的优化参数组合。接着按照实验设计制备均匀式掺杂和梯度掺杂两种不同掺杂结构的GaSb发射层薄膜,并利用霍尔测试、SEM、AFM等测试手段验证其制备质量及设计参数。最后对制备的不同掺杂结构的GaSb发射层样本进行了表面光电压谱测试,测试其光谱响应范围,并比较不同掺杂结构对其光电性能的影响,从而探索GaSb材料是否具备制备高性能微光夜视光阴极的可能,为之后GaSb光阴极激活实验及透射式GaSb光阴极的参数模拟、制备工艺提供支撑。通过实验得出:T=510℃、P=100mbar、V/III=2是GaSb发射层薄膜制备的一个优化参数组合。通过SEM与AFM测试显示在此参数组合下制备出的GaSb发射层样品表面接近镜面,在1μmⅹ1μm的范围内高度起伏不超过5.3nm。表面光电压谱测试显示GaSb发射层样品长波响应在1.7μm左右,已延伸至中红外波段,初步具备成为新型红扩展阴极的条件。在选取的掺杂浓度与厚度范围内,表面光电压随着发射层厚度的增加而增加,随着掺杂浓度的增加而减小。与均匀式掺杂结构相比梯度掺杂结构更有助于体内光生电子向表面输运。
[Abstract]:Based on the analysis and study of the photocathode theory and its parameter characterization of low light level night vision (LLL) night vision, GaSb materials, which are in III-V family with GaAs, are selected as the object of study. The photocathode emitter thin films are fabricated by MOCVD technique and are not activated.The effect of different process parameters on the epitaxial quality of GaSb emitter layer was studied by means of XRD and SEM, and the reaction temperature TMO source gas phase V/III was selected as the parameter variable during the preparation process.The optimal parameters for the epitaxial growth of GaSb emission film are also found.Then the uniform doping and gradient doped GaSb emission layer thin films were prepared according to the experimental design. The preparation quality and design parameters of the films were verified by Hall test and SEMMA-AFM.Finally, the surface photovoltage spectra of different doped GaSb emission layer samples were measured, the spectral response range was tested, and the effects of different doped structures on their photoelectric properties were compared.In order to explore whether the GaSb material has the possibility of preparing the high performance low-light night vision photocathode, it provides the support for the later GaSb photocathode activation experiment and the parameter simulation of the transmission GaSb photocathode, and the preparation process.The experimental results show that the ratio of 10 鈩，

本文编号：1756906