纳米MOS器件TID与HCI效应关联分析

发布时间：2018-04-16 21:16

本文选题：总剂量辐射效应 + 热载流子注入效应　；参考：《西安电子科技大学》2015年硕士论文

【摘要】：空间站、人造卫星等航天设备在空间环境中,会长期受到可靠性效应和总剂量辐射效应的影响。本文针对宇航环境中存在的可靠性效应和辐射效应以及两者之间相互的影响进行了分析。重点研究了纳米尺寸工艺下NMOS器件的总剂量辐射效应和热载流子效应的关联性。使用Sentaurus-TCAD软件分别仿真分析了两种效应对器件电学参数的影响,并在此基础上对二者的关联性做了仿真尝试。具体工作内容如下:(1)研究了总剂量辐射效应对MOS纳米尺寸器件的作用机理。使用Sentaurus TCAD软件建立了65nm NMOS器件模型,仿真了在不同的剂量条件下,器件的泄露电流的变化。仿真分析结果显示,当剂量达到500krad的条件下,器件的泄露电流从1.68E-09A增加至8.76E-07A,增加了两个数量级。(2)研究了热载流子注入效应对MOS纳米尺寸器件的作用机理以及热载流子效应预估寿命的模型。使用Sentaurus TCAD软件仿真了65nm NMOS器件在热载流子注入效应下参数随时间的变化情况。仿真结果显示,在应力偏置为Vgs=Vds=2V的条件下,加速应力时间为105s之后,该器件的饱和漏电流增加了6%。根据器件的参数变化与时间呈幂率关系,推算出其与时间的幂率指数为0.39。(3)研究了两种效应之间可能存在的关联性,由于总剂量效应导致了沟道中电子浓度的增加,而在纳米器件下,沟道浓度的增加会引起沟道中出现大量的电子电子散射现象,散射几率与沟道的电子浓度呈现正相关,从而加剧了沟道热载流子现象。所以二者的结果不会是简单叠加的结果。
[Abstract]:Space station, satellite and other spaceflight equipments will be affected by reliability effect and total dose radiation effect for a long time in space environment.In this paper, the reliability effect, radiation effect and the interaction between them are analyzed.The relationship between the total dose radiation effect and the hot carrier effect of NMOS devices in nanoscale process is studied.The effects of the two effects on the electrical parameters of the devices are simulated by using Sentaurus-TCAD software, and the correlation between the two effects is simulated.The main work is as follows: (1) the mechanism of total dose radiation effect on MOS nanoscale devices is studied.The 65nm NMOS device model is established by using Sentaurus TCAD software, and the variation of leakage current is simulated under different dosages.The simulation results show that when the dose reaches 500krad,The leakage current of the device was increased from 1.68E-09A to 8.76E-07A by two orders of magnitude.) the mechanism of hot carrier injection effect on MOS nanoscale devices and the model of predicting lifetime of hot carrier effect were studied.The variation of the parameters of 65nm NMOS devices with time under the hot carrier injection effect is simulated by using Sentaurus TCAD software.The simulation results show that when the stress bias is Vgs=Vds=2V and the acceleration stress time is 105 s, the saturation leakage current of the device increases by 6 parts.According to the power relation between the parameters of the device and the time, the power exponent of the device and the time is calculated to be 0.39. 3) the possible correlation between the two effects is studied. The total dose effect leads to the increase of electron concentration in the channel.In nanodevices, the increase of channel concentration will lead to a large number of electron scattering phenomenon in the channel. The scattering probability is positively correlated with the channel electron concentration, thus exacerbating the channel hot carrier phenomenon.So the result of the two will not be the result of simple superposition.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386.1

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